Results 91 to 100 of about 75,173 (277)
Applied physics: New technique for oxide interfaces Recent advances in synthesizing and engineering oxide interfaces and heterostructures have provided a powerful strategy for creating new artificial structures exhibiting phenomena not possible in other ...
Qingyu Lei +16 more
doaj +1 more source
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform.
Lucie Mazet +4 more
doaj +1 more source
We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh +5 more
wiley +1 more source
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively.
Baraniecki, Tomasz +14 more
core +1 more source
Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals
Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici +9 more
wiley +1 more source
Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review
This review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
doaj +1 more source
Spectral Tuning of Hyperbolic Shear Polaritons in Monoclinic Gallium Oxide via Isotopic Substitution
Spectral tuning of highly directional hyperbolic shear polaritons is realized via isotopic substitution of 16O to 18O in monoclinic β$\beta$‐phase gallium oxide. A red‐shift of almost 40 cm−1 is experimentally demonstrated with near‐field imaging, corroborated by the permittivity change extracted from far‐field experiments and density functional theory.
Giulia Carini +28 more
wiley +1 more source
Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng +11 more
wiley +1 more source

