Results 121 to 130 of about 75,173 (277)
Advanced Photonics Research, Volume 6, Issue 5, May 2025.Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
Study of process technology for GaAlAs/GaAs heteroface solar cells [PDF]
Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per
Almgren, D. W. +3 more
core +1 more source
Advanced Photonics Research, EarlyView.This review highlights recent advances in accelerating luminescence in nanostructures through cooperative emission, resonator coupling, and nonlocal light–matter interactions. By unifying concepts such as excitonic superradiance, superfluorescence, and the plasmonic Purcell effect, it reveals physical limits of ultrafast emission and their potential ...
Masaaki Ashida +3 more
wiley +1 more source
Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates [PDF]
, 2005 Isao Tamai +2 more
openalex +1 more source
Magnetic Anisotropy Modulation via van der Waals Gap Engineering in 2D Ferromagnet Fe4GeTe2
Advanced Science, EarlyView.This study demonstrates a new route to control magnetic anisotropy in 2D ferromagnets via van der Waals gap engineering. In Fe4GeTe2, an interface‐induced vdW gap expansion is found to anomalously enhance in‐plane magnetic anisotropy while suppressing the spin reorientation transition.
Weiran Xie +13 more
wiley +1 more source
Advanced Science, EarlyView.A thin topological insulator (Bi2Te3) inserted between two single magnetic septuple layers of MnBi2Te4 is shown to convert the intrinsic antiferromagnetic interlayer coupling into robust ferromagnetism. As the Bi2Te3 spacer thickness increases from 1 to 4 quintuple layers, the weakening coercivity, Curie temperature, and interlayer coupling reveal ...
Enayet Hossain +10 more
wiley +1 more source
Photoluminescence of ingaas/inp grown by molecular beam epitaxy
Semina: Ciências Exatas e Tecnológicas, 2004 Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate.
Harmand Jean Christophe +8 more
doaj
Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures [PDF]
, 1997 C. Besikci +6 more
openalex +1 more source
Atomically Resolved Electron Reflectivity at a Metal/Semiconductor Interface
Advanced Science, EarlyView.An atomically flat interface is achieved in the incoherent Al/Ge heterostructure using molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM) reveals a laterally periodic modulation of electron reflectivity with atomic resolution at the commensurate Al/Ge interfacial lattice, originating from the local electronic states.
Ding‐Ming Huang +5 more
wiley +1 more source