Results 131 to 140 of about 75,173 (277)

Molecular beam epitaxy of III-V compounds: a comprehensive bibliography, 1958-1983edited by K. Ploog [PDF]

, 1985
J. H. Robertson
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Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence

Advanced Science, EarlyView.
An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan, Xiren Chen, Liangqing Zhu, Lijuan Wang, Man Wang, Shumin Wang, Jun Shao   +6 more
wiley   +1 more source

Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy

Nature Communications
Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains.
Yuki Sato, Soma Nagahama, Shunsuke Kitou, Hajime Sagayama, Ilya Belopolski, Ryutaro Yoshimi, Minoru Kawamura, Atsushi Tsukazaki, Naoya Kanazawa, Takuya Nomoto, Ryotaro Arita, Taka-hisa Arima, Masashi Kawasaki, Yoshinori Tokura   +13 more
doaj   +1 more source

Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution [PDF]

, 2017
Alioune Diouf
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Inside the Microreactor: In Situ Real‐Time Observation of Vapor–Liquid–Solid Growth of Monolayer TMDCs

Advanced Science, EarlyView.
In situ observation of VLS growth in a confined microreactor reveals various growth modes of monolayer TMDCs, including abnormal ribbon growth and particle‐driven growth. The confined space and precursor balance influence droplet behavior and growth dynamics, offering new insights into the controlled synthesis of TMDCs via the VLS mechanism.
Hiroo Suzuki, Yutaro Senda, Kaoru Hisama, Shuhei Aso, Yuta Takahashi, Shun Fujii, Yasuhiko Hayashi   +6 more
wiley   +1 more source

A Facile Route to Large‐Area 2D Pt

Advanced Science, EarlyView.
This work demonstrates a simple route to form continuous 2D platinum (Pt) films only up to 0.3 nm thick using a gallium oxide (GaOx) adhesion layer. The oxygen‐deficient GaOx reverses wetting thermodynamics, enabling scalable sputtering of transparent, conductive, and robust 2D Pt.
Minsik Kong, Zhen Zhang, Weiyin Chen, Ethan Yupeng Zheng, Aubrey Penn, Ju Li   +5 more
wiley   +1 more source

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy

Nanomaterials
This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor–solid–liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst ...
Igor V. Shtrom, Nickolai V. Sibirev, Ilya P. Soshnikov, Igor V. Ilkiv, Evgenii V. Ubyivovk, Rodion R. Reznik, George E. Cirlin   +6 more
doaj   +1 more source

Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO₄ by Radio‐Frequency Molecular Beam Epitaxy [PDF]

, 2023
Yuichi Wada, Momoko Deura, Yuya Kuroda, Naoki Goto, Seiya Kayamoto, Takashi Fujii, Shinichiro Mouri, Tsutomu Araki   +7 more
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Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

Advanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim, Chansoo Yoon, Haena Yim, Taeyoon Kim, Hoyoung Suh, Woohyeon Ryu, Gwangtaek Oh, Jihoon Jeon, Kwanyoung Oh, Yeonjoo Jeong, Ji‐Won Choi, Bae Ho Park   +11 more
wiley   +1 more source