Results 131 to 140 of about 64,159 (182)

High-Quality Single Crystalline Sc_0.37Al_0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel)
Yin Y, Liu R, Zhao H, Fan S, Zhang J, Li S, Sun Q, Yang H.   +7 more
europepmc   +1 more source

Structural and surface characterizations of 2D β-In₂Se₃/3D β-Ga₂O₃ heterostructures grown on c-Sapphire substrates by molecular beam epitaxy. [PDF]

Sci Rep
Nallasani UR, Wu SK, Diep NQ, Lin YY, Wen HC, Chou WC, Chia CH.   +6 more
europepmc   +1 more source

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films. [PDF]

Natl Sci Rev
Bai Y, Li Y, Luan J, Liu R, Song W, Chen Y, Ji PF, Zhang Q, Meng F, Tong B, Li L, Jiang Y, Gao Z, Gu L, Zhang J, Wang Y, Xue QK, He K, Feng Y, Feng X.   +19 more
europepmc   +1 more source

The growth of Ge and direct bandgap Ge_1-xSn_x on GaAs (001) by molecular beam epitaxy. [PDF]

RSC Adv
Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ.   +11 more
europepmc   +1 more source

Molecular Beam Epitaxy of β-(In_xGa_1-x)₂O₃ on β-Ga₂O₃ (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement. [PDF]

ACS Appl Mater Interfaces
Mazzolini P, Wouters C, Albrecht M, Falkenstein A, Martin M, Vogt P, Bierwagen O.   +6 more
europepmc   +1 more source

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Molecular-Beam Epitaxy

AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
exaly   +7 more sources

Molecular Beam Epitaxy

Journal of the Society of Mechanical Engineers, 1989
A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
  +5 more sources

Molecular Beam Epitaxy

1991
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
  +4 more sources

Molecular beam epitaxy: An overview

2011
Molecular beam epitaxy (MBE) is an epitaxial technology suited for the preparation of advanced structures with composition and doping profiles controlled on a nanometer scale. The MBE growth mechanisms of both lowly (
P Frigeri, L Seravalli, G Trevisi, S Franchi   +3 more
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Molecular beam epitaxy

Surface Science, 2002
Abstract Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the ...
openaire   +1 more source