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Gas source molecular beam epitaxy
Conference on Lasers and Electro-Optics, 1985The replacement of the elemental sources of conventional MBE with simple compounds, first reported in 1980 [1], was initiated in order to bring the advantages of molecular beam epitaxy to the growth of GaxIn1−xAs1−yPy/InP heterostructures. These advantages center about precision in layer thickness and abruptness in doping and heterojunction interfaces.
M B Panish, H Temkin
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Silicon molecular beam epitaxy
Advanced Materials, 1991AbstractRecent results in the field of silicon molecular beam epitaxy (SiMBE) are reviewed. Emphasis is put on the possibility of doping‐profile engineering, as in delta‐doped layers. Heteroepitaxy of Si1 −xGex on Si is discussed in detail. Due to the band‐gap narrowing in the Si1 −xGex several improved devices can be designed, such as heterojunction ...
Dirk J. Gravesteijn +2 more
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Vacuum, 1981
This article reviews the major physico-chemical aspects of molecular beam epitaxy (MBE), especially as applied to the deposition of thin epitaxial films of 111-V compound and alloy semiconductors. The experimental requirements to achieve the necessary levels of control, purity and uniformity are described first to establish the basic features of the ...
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This article reviews the major physico-chemical aspects of molecular beam epitaxy (MBE), especially as applied to the deposition of thin epitaxial films of 111-V compound and alloy semiconductors. The experimental requirements to achieve the necessary levels of control, purity and uniformity are described first to establish the basic features of the ...
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1988
Molecular beam epitaxy (MBE) is a sophisticated method of film growth capable of providing the device engineer with any desired structure. This flexibility has emerged from a thorough understanding of the fundamental factors controlling growth and dopant incorporation obtained using modulated molecular beam spectroscopy, reflection high energy electron
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Molecular beam epitaxy (MBE) is a sophisticated method of film growth capable of providing the device engineer with any desired structure. This flexibility has emerged from a thorough understanding of the fundamental factors controlling growth and dopant incorporation obtained using modulated molecular beam spectroscopy, reflection high energy electron
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Silicon Molecular Beam Epitaxy
1990Aspects of the molecular beam epitaxy of Si and Ge on Si(001) are described. For Si-on-Si, step formation and growth mechanisms on vicinal surfaces are considered, using RHEED and STM. Ge-on-Si heteroepitaxy is discussed, including growth mode and lattice relaxation.
T. Sakamoto +5 more
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