Results 141 to 150 of about 75,173 (277)

Molecular beam epitaxy growth of IrO2 using plasma-only oxidation

APL Materials
Growth of IrO2 films via molecular beam epitaxy (MBE) using an oxygen plasma as the sole oxidant is demonstrated for the first time. We investigate the oxidizing conditions required for IrO2 by characterizing the species present in the plasma using ...
D. Sacksteder, S. C. Dahl, J. Dorsey, K. Yazawa, M. E. Holtz   +4 more
doaj   +1 more source

Electric Field Modulation of Interlayer Coupling via Piezostrain in a Synthetic Antiferromagnet

Advanced Science, EarlyView.
Controlling the interlayer exchange coupling (IEC) in synthetic antiferromagnets (SAFs) using an electric field is a promising route toward energy‐efficient spintronic devices. In this study, electric field induced‐strain modulation of IEC in Co/Ru/Co SAF/PMN‐PT is demonstrated.
Yuichi Hisada, Sachio Komori, Keiichiro Imura, Chenyu Shen, Yoshihiro Gohda, Calvin Ching Ian Ang, Wen Siang Lew, Tomoyasu Taniyama   +7 more
wiley   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

Advanced Science, EarlyView.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K. Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel   +10 more
wiley   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Reduction of surface defect with silicon-molecular beam epitaxy.

, 1989
Ken-ichi Aketagawa, Junro Sakai
openalex   +2 more sources

Towards smooth (010) β-Ga₂O₃ films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio

, 2020
P Mazzolini, O Bierwagen
openalex   +1 more source

Advances in Thermoelectric Thin Films Grown by Atomic Layer Deposition: A Critical Review of Performance and Challenges

Advanced Energy Materials, EarlyView.
This review highlights the use of atomic layer deposition (ALD) for fabricating thermoelectric thin films with atomic‐scale control. Four material classes—chalcogenides, doped oxides, ternary oxides, and multilayered structures—are compared in terms of growth dynamics, structure–property relationships, and thermoelectric performance. The precise tuning
Jorge Luis Vazquez‐Arce, Dong‐Ho Shin, Shuyue Yao, Shiyang He, Kornelius Nielsch, Amin Bahrami   +5 more
wiley   +1 more source

Molecular Beam Epitaxy [PDF]

MRS Bulletin, 1983
openaire   +1 more source

Ga Adlayer Coverage and Surface Morphology Evolution during GaN Growth by Plasma-assisted Molecular Beam Epitaxy

, 2014
Liang Pang
openalex   +1 more source

2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy

, 2020
Yukun Sun, Shizhao Fan, Joseph Faucher, Ryan D. Hool, Brian Li, Pankul Dhingra, Minjoo Larry Lee   +6 more
openalex   +2 more sources