Results 11 to 20 of about 75,173 (277)
Materials Proceedings, 2023 The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed.
Anatoly V. Dvurechenskii +6 more
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GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates
Crystals, 2022 Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal ...
Evgeniy Klimov +9 more
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Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy
APL Materials, 2021 Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the
Joseph Roth +5 more
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Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
Nanomaterials, 2023 GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111)
Karol Olszewski +5 more
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Hybrid molecular beam epitaxy of germanium-based oxides
Communications Materials, 2022 Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.
Fengdeng Liu +8 more
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Observation of confined propagation in Bragg waveguides [PDF]
, 1977 A new type of waveguiding in a slab dielectric bounded on one side by air and on the other by a periodic layered medium (grown by molecular beam epitaxy) has been ...
Cho, A. Y., Yariv, A., Yeh, P.
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Silicon Molecular Beam Epitaxy [PDF]
Extended Abstracts of the1983 Conference on Solid State Devices and Materials, 1983 Many works are now conducted in the worldwide scale on silicon molecular beam epitaxy (Si MBE) including homoepitaxy, doping, heteroepitaxy such as silicon/insulator, silicon/other semiconductor, and silicon/metal (silicide), and poly-Si deposition. As for device applications, work is now moving from conventional discrete devices to integrated circuits
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Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots
Nanomaterials, 2023 Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots [...]
Xiaohui Li, Qian Xu, Ziyang Zhang
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Nanomaterials, 2022 A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires.
Vladimir G. Dubrovskii
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Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
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