Results 221 to 230 of about 75,173 (277)
Coherent Spin Waves in Curved Ferromagnetic Nanocaps of a 3D‐Printed Magnonic Crystal
Small, Volume 22, Issue 7, 2 February 2026.A nanoprinted 3D magnonic woodpile crystal is measured by microresonator ferromagnetic resonance. Micromagnetic simulations are performed to analyze and visualize the detected coherent spin‐wave modes along the nickel‐coated tubes and caps for various field angles. The woodpile exhibits an unexpected phase evolution and robust edge modes.
Huixin Guo +6 more
wiley +1 more source
Small Structures, Volume 7, Issue 2, February 2026.In this high‐fidelity dehydration and low‐artifact scanning electron microscopy (SEM) analysis method for DNA brick‐based crystalline films, Ni2+ ions suppress dehydration‐induced deformation of DNA nanopatterns on solid substrates and form semiconducting nickel phosphate derivatives, enhancing electrical and thermal conductivity.
Ruoyu Dai +6 more
wiley +1 more source
ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR
, 1988 C. Fontaine +3 more
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Journal of the Society of Mechanical Engineers, 1989
A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
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A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
+5 more sources
AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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1991
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
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Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
+4 more sources
Molecular beam epitaxy: An overview
2011Molecular beam epitaxy (MBE) is an epitaxial technology suited for the preparation of advanced structures with composition and doping profiles controlled on a nanometer scale. The MBE growth mechanisms of both lowly (
P Frigeri +3 more
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Surface Science, 2002
Abstract Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the ...
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Abstract Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the ...
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Gas source molecular beam epitaxy
Conference on Lasers and Electro-Optics, 1985The replacement of the elemental sources of conventional MBE with simple compounds, first reported in 1980 [1], was initiated in order to bring the advantages of molecular beam epitaxy to the growth of GaxIn1−xAs1−yPy/InP heterostructures. These advantages center about precision in layer thickness and abruptness in doping and heterojunction interfaces.
M B Panish, H Temkin
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