Results 21 to 30 of about 75,173 (277)

Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

APL Materials, 2016
The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex
A. T. Bollinger, J. Wu, I. Božović
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Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys [PDF]

, 2013
GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here,
Detert, D., Foxon, C.T., Levander, A., Liliental-Weber, Z., Martin, R.W., Novikov, S.V., Sarney, W.L., Shaw, M., Svensson, S.P., Walukiewicz, W., Yu, K.M.   +10 more
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Lateral coherence properties of broad-area semiconductor quantum well lasers [PDF]

, 1986
The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence
Larsson, A., Mittelstein, M., Salzman, J., Yariv, A.   +3 more
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Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
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Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

AIP Advances, 2018
We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved.
Cheng-Da Tsai, Ikai Lo, Ying-Chieh Wang, Chen-Chi Yang, Shuo-Ting You, Hong-Yi Yang, Hui-Chun Huang, Mitch M. C. Chou   +7 more
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Wafer-scale epitaxial modulation of quantum dot density

Nature Communications, 2022
Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.
N. Bart, C. Dangel, P. Zajac, N. Spitzer, J. Ritzmann, M. Schmidt, H. G. Babin, R. Schott, S. R. Valentin, S. Scholz, Y. Wang, R. Uppu, D. Najer, M. C. Löbl, N. Tomm, A. Javadi, N. O. Antoniadis, L. Midolo, K. Müller, R. J. Warburton, P. Lodahl, A. D. Wieck, J. J. Finley, A. Ludwig   +23 more
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Perspective: Oxide molecular-beam epitaxy rocks!

APL Materials, 2015
Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level.
Darrell G. Schlom
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Superconductivity in hyperdoped Ge by molecular beam epitaxy

AIP Advances, 2023
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation.
Patrick J. Strohbeen, Aurelia M. Brook, Wendy L. Sarney, Javad Shabani   +3 more
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Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study

, 2009
A clean Si(001) surface thermally purified in an ultrahigh vacuum molecular-beam epitaxy chamber has been investigated by means of scanning tunneling microscopy. The morphological peculiarities of the Si(001) surface have been explored in detail.
A. Goryachko, A. Ney, B. Z. Liu, D. J. Chadi, H. Iton, H. Kageshima, H. W. Liu, J.-Y. Koo, K. Hata, K. N. Eltsov, L. V. Arapkina, R. J. Hamers, T. Kubo, V. A. Yuryev, V. M. Shevlyuga, X. Hu   +15 more
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Local roughness exponent in the nonlinear molecular-beam-epitaxy universality class in one-dimension [PDF]

, 2018
We report local roughness exponents, $\alpha_{\text{loc}}$, for three interface growth models in one dimension which are believed to belong the non-linear molecular-beam-epitaxy (nMBE) universality class represented by the Villain-Lais-Das Sarma (VLDS ...
Andrade, Roberto F. S., de Assis, Thiago A., Ferreira, Silvio C., Luis, Edwin E. Mozo   +3 more
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