Results 31 to 40 of about 64,159 (182)

Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study

, 2009
A clean Si(001) surface thermally purified in an ultrahigh vacuum molecular-beam epitaxy chamber has been investigated by means of scanning tunneling microscopy. The morphological peculiarities of the Si(001) surface have been explored in detail.
A. Goryachko, A. Ney, B. Z. Liu, D. J. Chadi, H. Iton, H. Kageshima, H. W. Liu, J.-Y. Koo, K. Hata, K. N. Eltsov, L. V. Arapkina, R. J. Hamers, T. Kubo, V. A. Yuryev, V. M. Shevlyuga, X. Hu   +15 more
core   +1 more source

Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes [PDF]

, 1989
Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick.
Florez, L. T., Harbison, J. P., Jewell, J. L., Lee, Y. H., McCall, S. L., Scherer, A.   +5 more
core   +1 more source

Molecular beam epitaxy of KTaO3

Journal of Vacuum Science & Technology A, 2023
Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high-quality KTaO3 thin films by molecular-beam epitaxy.
Tobias Schwaigert, Salva Salmani-Rezaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi   +8 more
openaire   +2 more sources

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography [PDF]

, 2013
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles ...
Hertog, Martien Den, Monroy, Eva, Songmuang, Rudeesun   +2 more
core   +5 more sources

Application and research progress of flux monitoring technology by atomic absorption spectroscopy in molecular beam epitaxy

Gongneng cailiao yu qijian xuebao
Based on a brief review of the development history of atomic absorption spectroscopy technology, this paper summarizes the structure of the atomic absorption spectroscopy system used for in-situ real-time monitoring of the flux in molecular beam epitaxy,
Qing-ling-yun ZHANG, Yi-qiao CHEN
doaj   +1 more source

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$

, 2015
In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are ...
Eschbach, Markus, Grützmacher, Detlev, Holländer, Bernhard, Kampmeier, Jörn, Kellner, Jens, Lanius, Martin, Liebmann, Marcus, Mlynczak, Ewa, Morgenstern, Markus, Mussler, Gregor, Plucinski, Lukasz, Schneider, Claus M.   +11 more
core   +1 more source

Local roughness exponent in the nonlinear molecular-beam-epitaxy universality class in one-dimension [PDF]

, 2018
We report local roughness exponents, $\alpha_{\text{loc}}$, for three interface growth models in one dimension which are believed to belong the non-linear molecular-beam-epitaxy (nMBE) universality class represented by the Villain-Lais-Das Sarma (VLDS ...
Andrade, Roberto F. S., de Assis, Thiago A., Ferreira, Silvio C., Luis, Edwin E. Mozo   +3 more
core   +2 more sources

Molecular beam epitaxy of Nd2PdO4 thin films

AIP Advances, 2017
We synthesized high quality, single crystalline thin films of a layered, complex 4d transition metal oxide (Nd2PdO4) by reactive molecular beam epitaxy, in order to determine the electronic structures associated with ...
Yoshiko Nanao, Ai Ikeda, Michio Naito, Hideki Yamamoto, Kazuhide Kumakura, Yoshiharu Krockenberger   +5 more
doaj   +1 more source

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

Crystals, 2016
Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect.
Chad A. Stephenson, Miriam Gillett-Kunnath, William A. O’Brien, Robert Kudrawiec, Mark A. Wistey   +4 more
doaj   +1 more source

Fabrication of nanometer single crystal metallic CoSi2 structures on Si [PDF]

, 1991
Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an ...
Fathauer, Robert W., Lin, True-Lon, Nieh, Kai-Wei   +2 more
core   +1 more source