Results 31 to 40 of about 75,173 (277)

Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes [PDF]

open access: yes, 1989
Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick.
Florez, L. T.   +5 more
core   +1 more source

Molecular beam epitaxy of KTaO3

open access: yesJournal of Vacuum Science & Technology A, 2023
Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high-quality KTaO3 thin films by molecular-beam epitaxy.
Tobias Schwaigert   +8 more
openaire   +2 more sources

In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy [PDF]

open access: yes, 1997
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy.
Ahn, C. C.   +6 more
core   +1 more source

Copper‐based Materials for Photo and Electrocatalytic Process: Advancing Renewable Energy and Environmental Applications

open access: yesAdvanced Functional Materials, EarlyView.
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida   +16 more
wiley   +1 more source

Control of InGaAs facets using metal modulation epitaxy (MME)

open access: yes, 2014
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features.
Baraskar, Ashish K.   +8 more
core   +1 more source

Enhancing Direct Solar Water Splitting via ALD of Multifunctional TiO2/Pt Nanoparticle Coatings With Engineered Interfaces to GaAs/GaInP Tandem Cells

open access: yesAdvanced Functional Materials, EarlyView.
Multifunctional atomic layer deposited coatings and interface treatments enhance direct solar water splitting on GaAs/GaInP tandem cells. Optimized TiO2/Pt nanoparticle bilayers ensure durability and catalytic efficiency with minimal optical losses, while H2 plasma pretreatments maximize photovoltage and interfacial charge extraction.
Tim F. Rieth   +8 more
wiley   +1 more source

Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry [PDF]

open access: yes, 1995
Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickness films by analysis of extended-edge energy loss fine structure (EXELFS) data obtained by reflection electron energy loss spectrometry (REELS).
Ahn, Channing C.   +4 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

Application and research progress of flux monitoring technology by atomic absorption spectroscopy in molecular beam epitaxy

open access: yesGongneng cailiao yu qijian xuebao
Based on a brief review of the development history of atomic absorption spectroscopy technology, this paper summarizes the structure of the atomic absorption spectroscopy system used for in-situ real-time monitoring of the flux in molecular beam epitaxy,
Qing-ling-yun ZHANG, Yi-qiao CHEN
doaj   +1 more source

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

open access: yesCrystals, 2016
Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect.
Chad A. Stephenson   +4 more
doaj   +1 more source

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