Results 41 to 50 of about 64,159 (182)

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

open access: yes, 2004
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by
Fiederling, R.   +7 more
core   +1 more source

Elemental boron doping behavior in silicon molecular beam epitaxy [PDF]

open access: yes, 1991
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C.
C. P. Parry   +10 more
core   +1 more source

Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum [PDF]

open access: yes, 2016
In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to
Choi, Woo Seok   +3 more
core   +3 more sources

Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy [PDF]

open access: yes, 1995
We present a method for measuring molecular‐beam epitaxy growth rates in near real‐time on rotating substrates. This is done by digitizing a video image of the reflection high‐energy electron diffraction screen, automatically tracking and measuring the ...
Collins, D. A.   +2 more
core  

Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in ${\beta}$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures

open access: yes, 2020
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system.
Krishnamoorthy, Sriram, Lyman, Joseph E.
core   +1 more source

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

open access: yesNature Communications, 2021
The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature.
Xiaoqian Zhang   +16 more
doaj   +1 more source

STM and RHEED study of the Si(001)-c(8x8) surface [PDF]

open access: yes, 2010
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnelling microscopy (STM) and reflected high energy electron diffraction (RHEED)
A Goryachko   +58 more
core   +2 more sources

Epitaxial Growth of BaBiO3 Thin Films on SrTiO3(001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations

open access: yesCrystals
BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed   +2 more
doaj   +1 more source

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2. [PDF]

open access: yes, 2018
In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies.
Asaba, Tomoya   +11 more
core   +2 more sources

Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

open access: yesActive and Passive Electronic Components, 1997
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated.
K. K. Wu
doaj   +1 more source

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