Results 41 to 50 of about 75,173 (277)

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

, 2004
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by
Fiederling, R., Gould, C., Keller, D., Molenkamp, L. W., Ossau, W., Rüster, C., Schmidt, G., Slobodskyy, T.   +7 more
core   +1 more source

Elemental boron doping behavior in silicon molecular beam epitaxy [PDF]

, 1991
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C.
C. P. Parry, E. H. C. Parker, Jackman T. E., Kubiak R. A. A., M. G. Dowsett, Narozny P., P. Augustus, R. A. A. Kubiak, R. D. Barlow, S. M. Newstead, T. E. Whall   +10 more
core   +1 more source

On‐Surface Indigo‐Based Bimolecular Coordination Networks with Programmable Regular or Vitreous Structure

Advanced Functional Materials, EarlyView.
A previously unreported coordination motif stabilising single Fe atoms by indigo chelation and pyridyl coordination on Au(111) has been revealed. By using planar tritopic pyridyl linkers (TPyB), extended 2D porous networks of indigo3(TPyB)2Fe6 form. These networks can be crystalline or vitreous and offer an environment where individual coordination ...
Hongxiang Xu, Ritam Chakraborty, Biao Yang, Dennis Meier, Joachim Reichert, Svetlana Klyatskaya, Mario Ruben, Shobhana Narasimhan, Johannes V. Barth, Anthoula C. Papageorgiou   +9 more
wiley   +1 more source

Molecular beam epitaxy of Nd2PdO4 thin films

AIP Advances, 2017
We synthesized high quality, single crystalline thin films of a layered, complex 4d transition metal oxide (Nd2PdO4) by reactive molecular beam epitaxy, in order to determine the electronic structures associated with ...
Yoshiko Nanao, Ai Ikeda, Michio Naito, Hideki Yamamoto, Kazuhide Kumakura, Yoshiharu Krockenberger   +5 more
doaj   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

Advanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey, Arjen van den Berg, Sandra Ruiz Gomez, Claire Donnelly, Dirk Grundler, Sam Ladak   +5 more
wiley   +1 more source

Fabrication of nanometer single crystal metallic CoSi2 structures on Si [PDF]

, 1991
Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an ...
Fathauer, Robert W., Lin, True-Lon, Nieh, Kai-Wei   +2 more
core   +1 more source

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography [PDF]

, 2013
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles ...
Hertog, Martien Den, Monroy, Eva, Songmuang, Rudeesun   +2 more
core   +5 more sources

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

Advanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch, Sergio L. A. Mello, Gilberto Rodrigues‐Junior, Sukarno O. Ferreira, Marcelo M. Sant'Anna, Benjamin R. Salles, Mateus T. Souza, Sérgio L. Morelhão, Maybi F. Sampaio, Bráulio S. Archanjo, Leonarde N. Rodrigues   +10 more
wiley   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy [PDF]

, 1995
We present a method for measuring molecular‐beam epitaxy growth rates in near real‐time on rotating substrates. This is done by digitizing a video image of the reflection high‐energy electron diffraction screen, automatically tracking and measuring the ...
Collins, D. A., McGill, T. C., Papa, G. O.   +2 more
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