Results 41 to 50 of about 64,159 (182)
Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by
Fiederling, R. +7 more
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Elemental boron doping behavior in silicon molecular beam epitaxy [PDF]
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C.
C. P. Parry +10 more
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Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum [PDF]
In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to
Choi, Woo Seok +3 more
core +3 more sources
Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy [PDF]
We present a method for measuring molecular‐beam epitaxy growth rates in near real‐time on rotating substrates. This is done by digitizing a video image of the reflection high‐energy electron diffraction screen, automatically tracking and measuring the ...
Collins, D. A. +2 more
core
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system.
Krishnamoorthy, Sriram, Lyman, Joseph E.
core +1 more source
Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films
The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature.
Xiaoqian Zhang +16 more
doaj +1 more source
STM and RHEED study of the Si(001)-c(8x8) surface [PDF]
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnelling microscopy (STM) and reflected high energy electron diffraction (RHEED)
A Goryachko +58 more
core +2 more sources
BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed +2 more
doaj +1 more source
Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2. [PDF]
In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies.
Asaba, Tomoya +11 more
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Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated.
K. K. Wu
doaj +1 more source

