Results 61 to 70 of about 64,159 (182)

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Nature Communications, 2016
Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng, Chih-Kang Shih   +6 more
doaj   +1 more source

Liquid-Metal-Enabled Synthesis of Aluminum-Containing III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy

, 2016
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core  

Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy

, 2011
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman ...
Akifumi Kasamatsu, Alonso, Hanafusa, Harold M. H. Chong, Hirashita, Hiroaki Hanafusa, Hiroshi Mizuta, Kutsukake, Lee, Lutz, Maekawa, Maiti, Nobumitsu Hirose, Rosenbrad, Saito, Sawano, Sawano, Sawano, Takashi Mimura, Toshiaki Matsui, Tsang, Wong, Wu, Yoshiyuki Suda, Zhu   +24 more
core   +1 more source

Molecular beam epitaxy growth of superconducting Sr2RuO4 films

APL Materials, 2017
We report the growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate ...
M. Uchida, M. Ide, H. Watanabe, K. S. Takahashi, Y. Tokura, M. Kawasaki   +5 more
doaj   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

Infrared Rugates by Molecular Beam Epitaxy [PDF]

Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt
Rona, M.
core   +1 more source

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

APL Materials, 2016
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites.
Santosh Raghavan, Timo Schumann, Honggyu Kim, Jack Y. Zhang, Tyler A. Cain, Susanne Stemmer   +5 more
doaj   +1 more source

Research on real-time optical flux monitoring technology in molecular beam epitaxy based on LED light source

Gongneng cailiao yu qijian xuebao
An LED with a spectral width between narrow and wide spectrum light sources was employed as the meso-spectral light source solution. Based on atomic absorption, non-invasive real-time multi-element flux intensity measurement and monitoring were achieved ...
Qinglingyun ZHANG, Xiaozhen WANG, Jianmei LI, Yiqiao CHEN   +3 more
doaj   +1 more source

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

npj Quantum Materials, 2017
Applied physics: New technique for oxide interfaces Recent advances in synthesizing and engineering oxide interfaces and heterostructures have provided a powerful strategy for creating new artificial structures exhibiting phenomena not possible in other ...
Qingyu Lei, Maryam Golalikhani, Bruce A. Davidson, Guozhen Liu, Darrell G. Schlom, Qiao Qiao, Yimei Zhu, Ravini U. Chandrasena, Weibing Yang, Alexander X. Gray, Elke Arenholz, Andrew K. Farrar, Dmitri A. Tenne, Minhui Hu, Jiandong Guo, Rakesh K. Singh, Xiaoxing Xi   +16 more
doaj   +1 more source

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

Science and Technology of Advanced Materials, 2015
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform.
Lucie Mazet, Sang Mo Yang, Sergei V Kalinin, Sylvie Schamm-Chardon, Catherine Dubourdieu   +4 more
doaj   +1 more source