Results 71 to 80 of about 64,159 (182)

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

, 2018
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively.
Baraniecki, Tomasz, Dluzewski, Piotr, Domagala, Jaroslaw Z., Gas, Katarzyna, Hommel, Detlef, Jakiela, Rafal, Kowalska, Dorota, Kunert, Gerd, Miszczuk, Andrzej, Paszkowicz, Wojciech, Piskorska-Hommel, Edyta, Sawicki, Maciej, Sztenkiel, Dariusz, Szukiewicz, Rafal, Winiarski, Maciej J.   +14 more
core   +1 more source

Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
This review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
doaj   +1 more source

Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs

EPJ Web of Conferences, 2017
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied.
Novikova N.N., Yakovlev V.A., Kucherenko I.V., Karczewski G., Chusnutdinow S.   +4 more
doaj   +1 more source

Classification of Ge hut clusters in the arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

, 2009
Morphological investigations and classification of Ge hut clusters forming the arrays of quantum dots on the Si(001) surface at low temperatures in the process of the ultrahigh vacuum molecular beam epitaxy have been carried out using in situ scanning ...
Arapkina, Bauer, Bauer, Eltsov, Jesson, L.V. Arapkina, Stranski, V.A. Yuryev, Voigtländer, Кучеренко, Пчеляков, Смагина   +11 more
core   +1 more source

Molecular beam epitaxy of Cd3As2 on a III-V substrate

APL Materials, 2016
Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac
Timo Schumann, Manik Goyal, Honggyu Kim, Susanne Stemmer   +3 more
doaj   +1 more source

Growth of PdCoO2 by ozone-assisted molecular-beam epitaxy

APL Materials, 2019
We report the in situ, direct epitaxial synthesis of (0001)-oriented PdCoO2 thin films on c-plane sapphire using ozone-assisted molecular-beam epitaxy. The resulting films have smoothness, structural perfection, and electrical characteristics that rival ...
Jiaxin Sun, Matthew R. Barone, Celesta S. Chang, Megan E. Holtz, Hanjong Paik, Jürgen Schubert, David A. Muller, Darrell G. Schlom   +7 more
doaj   +1 more source

Study of process technology for GaAlAs/GaAs heteroface solar cells [PDF]

Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per
Almgren, D. W., Byvik, C. E., Conway, E. J., Walker, G. H.   +3 more
core   +1 more source

Scaling growth rates for perovskite oxide virtual substrates on silicon

Nature Communications, 2019
A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid ...
Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert   +5 more
doaj   +1 more source

Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

Nanoscale Research Letters, 2010
We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings.
Somaschini C, Bietti S, Fedorov A, Koguchi N, Sanguinetti S   +4 more
doaj   +1 more source

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

Nanoscale Research Letters, 2010
We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings.
Fedorov A, Somaschini C, Bietti S, Koguchi N, Sanguinetti S   +4 more
doaj   +1 more source