Results 71 to 80 of about 75,173 (277)
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D +8 more
doaj +1 more source
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang +6 more
doaj +1 more source
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system.
Krishnamoorthy, Sriram, Lyman, Joseph E.
core +1 more source
Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters
Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak +8 more
wiley +1 more source
Comparative analysis of the process of formation of fractal metal films: atomistic simulation
In this paper, molecular dynamics method and the tight-binding potential were used to simulate a molecular beam epitaxy process for the formation of fractal metal films of copper subgroup elements (Ag, Au, Cu) on a solid surface of a more refractory ...
V.A. Anofriev +4 more
doaj +1 more source
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core
Efficient Charge Transport in Zero‐Dimensional Perovskite for Ultrahigh‐Sensitivity X‐Ray Detection
A novel mono‐octahedral 0D Bi‐based Dpy3Bi2I12 perovskite strengthens the internal hydrogen bonds and forms a quasi‐2D lattice, exhibits exceptional charge transport and mobility, achieving high X‐ray sensitivity and ultralow‐dose imaging, and setting a new benchmark for 0D detector performance.
Xin Song +16 more
wiley +1 more source
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll +19 more
wiley +1 more source
Molecular beam epitaxy growth of superconducting Sr2RuO4 films
We report the growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate ...
M. Uchida +5 more
doaj +1 more source

