Results 41 to 50 of about 156,764 (197)
Investigating positive oxide charge in the SiO2/3C-SiC MOS system
AIP Advances, 2018 This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC).
Karim Cherkaoui +7 more
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Nanomaterials, 2021 Metallic phase 1T MoS2 is a well-known potential anode for enhancing the electrochemical performance of lithium-ion batteries owing to its mechanical/chemical stability and high conductivity.
Thang Phan Nguyen, Il Tae Kim
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Nanomaterials, 2022 Vertically-stacked black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures have broad prospects in flexible electronics. Bending is a common and highly concerned deformation for these flexible devices.
Dong Li +3 more
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Magnetic and Electronic Properties of Edge-Modified Triangular WS2 and MoS2 Quantum Dots
Crystals, 2023 The magnetic and electronic properties of zigzag-triangular WS2 and MoS2 quantum dots are investigated using density functional theory calculations. The pristine WS2 and MoS2 nanodots hold permanent spin on their edges which originates from the unpaired ...
Hazem Abdelsalam +3 more
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Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior [PDF]
, 2014 Metal and oxide distribution in diamond metal–oxide– semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale.
Chen +15 more
core +4 more sources
Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods
Advances in Electrical and Electronic Engineering, 2004 The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods.
Pavol Pisecny +4 more
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Origin of layer dependence in band structures of two-dimensional materials
, 2017 We study the origin of layer dependence in band structures of two-dimensional materials. We find that the layer dependence, at the density functional theory (DFT) level, is a result of quantum confinement and the non-linearity of the exchange-correlation
Jain, Manish, Naik, Mit H.
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Modeling of A-DLTS Spectra of MOS Structures
Advances in Electrical and Electronic Engineering, 2008 Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor.
Peter Hockicko +4 more
doaj
Modelling the behavior of metal-oxide-semiconductor structures under thermal field treatment
Physics of Complex SystemsA quantitative model of the behavior of metal-oxide-semiconductor (MOS) structures subjected to thermal field treatment, particularly in the accumulation and recovery modes of mobile charge in the gate dielectric, is presented.
Олег Викторович Александров +1 more
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, 2019 We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage characteristics of MOS ...
Ito, Koji +2 more
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