Results 71 to 80 of about 157,312 (300)

Solid state switch provides high input-to-output isolation [PDF]

, 1970
Switch uses a combination of N-channel and P-channel Metal Oxide Semiconductor Field Effect Transistors /MOSFET/ to obtain a normally open switch with no power applied.
Magee, R. L., Trowbridge, L. E.
core   +1 more source

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., de Groot, C.H., Gili, E., Hakim, M.M.A., Hall, S., Kunz, D., Uchino, T.   +6 more
core   +1 more source

Modular, Textile‐Based Soft Robotic Grippers for Agricultural Produce Handling

Advanced Robotics Research, EarlyView.
This article introduces textile‐based pneumatic grippers that transform simple textiles into robust bending actuators. Detailed experiments uncover how cut geometry and fabric selection shape performance. Successful handling of fragile agricultural items showcases the potential of textile robotics for safe, scalable automation in food processing and ...
Zeyu Hou, Eran Beeri Bamani, Joao Buzzatto, Bryan Busby, Lucas Ferrari Gerez   +4 more
wiley   +1 more source

Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

Yuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source

Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

Energies, 2021
4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
doaj   +1 more source

Smart Energy–Harvesting Coating for Moisture–Droplets Based on Ionic Diodes and Transistor–Like Structures

Advanced Science, EarlyView.
A smart power‐generating coating is developed to harvest energy from both ambient humidity and impacting liquid droplets. The integrated system delivers sustained open‐circuit voltages of 0.85 V from moisture and up to 36 V from droplets. Its scalable coating architecture enables a continuous power supply for low‐power electronic devices.
Liang Ma, Mengdi Liu, Yuxi Yang, Zehao Wang, Lan Shi, Limin Wu   +5 more
wiley   +1 more source

The consequences of the application of a floating gate on d.c.-MISFET characteristics [PDF]

, 1984
In the literature the influence of the conducting layer, sometimes called a floating gate, upon d.c.-MISFET characteristics is ignored or only treated in a phenomenological way. Our intentions in this paper are to present a study of the consequences of a
Bergveld, P., Voorthuyzen, J.A.
core   +3 more sources

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

, 2011
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and
Constandinou, TG, Georgiou, P, Liu, Y, Prodromakis, T, Toumazou, C   +4 more
core   +1 more source

Two-stage optimization method for efficient power converter design including light load operation [PDF]

, 2012
Power converter efficiency is always a hot topic for switch mode power supplies. Nowadays, high efficiency is required over a wide load range, e.g., 20%, 50% and 100% load.
Lam, James, Ling, Wing-Kuen, Pong, Man-Hay, Yu, Ruiyang   +3 more
core   +1 more source