Results 71 to 80 of about 194,360 (332)
Advanced Science, EarlyView.A smart power‐generating coating is developed to harvest energy from both ambient humidity and impacting liquid droplets. The integrated system delivers sustained open‐circuit voltages of 0.85 V from moisture and up to 36 V from droplets. Its scalable coating architecture enables a continuous power supply for low‐power electronic devices.
Liang Ma +5 more
wiley +1 more source
A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET
Energies, 2021 Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity.
Hongyan Zhao +3 more
doaj +1 more source
Advanced Science, EarlyView.By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang +9 more
wiley +1 more source
Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET
Yuanzineng kexue jishuThe demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj +1 more source
Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
doaj +1 more source
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
Advanced Science, EarlyView.This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source
Spin resonance of 2D electrons in a large-area silicon MOSFET
, 2007 We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface.
A.M. Tyryshkin +16 more
core +1 more source
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
Two-stage optimization method for efficient power converter design including light load operation [PDF]
, 2012 Power converter efficiency is always a hot topic for switch mode power supplies. Nowadays, high efficiency is required over a wide load range, e.g., 20%, 50% and 100% load.
Lam, James +3 more
core +1 more source
Advanced Electronic Materials, EarlyView.Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source