Results 1 to 10 of about 51,300 (183)

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction [PDF]

Entropy
The use of Silicon Carbide (SiC) MOSFETs significantly improves converter performance by increasing efficiency and reducing costs, to the detriment of electro-magnetic emission and reliability.
Sanjiv Kumar, Bruno Allard, Malorie Hologne-Carpentier, Guy Clerc, François Auger   +4 more
doaj   +2 more sources

On-wafer wideband characterization: a powerful tool for improving the IC technologies

Journal of Telecommunications and Information Technology, 2023
In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic ...
Dimitri Lederer, Jean-Pierre Raskin
doaj   +1 more source

Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation

IEEE Access, 2023
After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules.
Hongwei Chen, Sheng Ai, Ziling Nie, Fengrui Cui, Pengfei Yuan   +4 more
doaj   +1 more source

Logic‐Compatible Charge‐Trapping Tunnel Field Effect Transistors for Low‐Power, High‐Accuracy, and Large‐Scale Neuromorphic Systems

Advanced Intelligent Systems, 2023
Charge‐trapping tunnel field effect transistors (CT‐TFETs) are experimentally demonstrated, and their array operations are discussed for low‐power large‐scale neuromorphic applications. CT‐TFETs cointegrated with charge‐trapping metal–oxide–semiconductor
Jae Seung Woo, Chae Lin Jung, Ki Ryung Nam, Woo Young Choi   +3 more
doaj   +1 more source

Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics

IEEE Journal of the Electron Devices Society, 2022
We reported temperature-dependent narrow width effects on electrical characteristics of 28-nm CMOS transistors measured at temperature of 77 K-300 K. At cryogenic temperatures, P-MOSFETs appear to have stronger temperature-induced threshold voltage ( $V_{
Ting Tsai, Horng-Chih Lin, Pei-Wen Li
doaj   +1 more source

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

IET Power Electronics, 2023
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and
Bufan Shi, Anna Isabel Ramones, Yingxu Liu, Haoran Wang, Yu Li, Stefan Pischinger, Jakob Andert   +6 more
doaj   +1 more source

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness [PDF]

, 2002
The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched 'off' (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current ...
Knitel, M.J., Kolhatkar, J.S., Salm, C., Wallinga, H.   +3 more
core   +2 more sources

The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]

, 2010
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M., Heppenstall, Keith, Kennedy, Ian, Khan, Khalid Saeed, Koh, Adrian, Parkin, Jim, Petkos, George, Rutter, Philip   +7 more
core   +1 more source

Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs

IEEE Journal of the Electron Devices Society, 2019
In this paper, the impacts of work function variation (WFV), line-edge roughness (LER), and ferroelectric properties variation on the threshold voltage, subthreshold swing (SS), Ion, and Ioff variations are analyzed comprehensively for negative ...
Vita Pi-Ho Hu, Pin-Chieh Chiu, Yi-Chun Lu   +2 more
doaj   +1 more source

Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility

IEEE Journal of the Electron Devices Society, 2016
Deformation potential (Dac), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, back ...
Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida   +4 more
doaj   +1 more source