Results 101 to 110 of about 51,359 (241)

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

, 2011
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and
Constandinou, TG, Georgiou, P, Liu, Y, Prodromakis, T, Toumazou, C   +4 more
core   +1 more source

Organic neuromorphic electronics powering intelligent sensory and edge computing systems

InfoMat, EarlyView.
Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo, Minji Chung, Hyun Woo Song, Seoyoung Kim, Eun Kwang Lee, Joon Hak Oh   +5 more
wiley   +1 more source

Online Junction Temperature Measurement for Power MOSFETs Using the Body Diode Under Varying Forward Currents

Energies
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) provide numerous advantages and are widely utilized in various power circuits. The junction temperature plays a critical role in determining the reliability, performance, and operational ...
Xueli Zhu, Yajie Huang, Donglai Zhang, Yuepeng Zhang, Jun Wu, Bowen Jiang, Linzhong Xia, Bo Gao, Changwei Lv   +8 more
doaj   +1 more source

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

IEEE Journal of the Electron Devices Society, 2014
A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 ...
S. M. Thomas, Y. K. Sharma, M. A. Crouch, C. A. Fisher, A. Perez-Tomas, M. R. Jennings, P. A. Mawby   +6 more
doaj   +1 more source

Coaxial Dipole Array With Switching Transmit Sensitivities for Ultrahigh Field MRI

Magnetic Resonance in Medicine, EarlyView.
ABSTRACT Purpose To investigate dipole antennas with electronically switchable transmit field patterns to improve flip angle homogeneity in ultra‐high field MRI. Methods Reconfigurable dipole elements that could produce two distinct electronically switchable B1+$$ {B}_1^{+} $$ field profiles were conceptualized and constructed. Eight such elements were
Dario Bosch, Georgiy A. Solomakha, Felix Glang, Martin Freudensprung, Nikolai Avdievich, Klaus Scheffler   +5 more
wiley   +1 more source

Recent advances in diamond MOSFETs with normally off characteristics

Functional Diamond
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li, Xueqia Zhang, Shuopei Jiao, Yanrong Wang, Shuhua Wei, Jiang Yan, Jing Zhang, Xufang Zhang   +7 more
doaj   +1 more source

Analytical Solution to the Gradual Channel Approximation for Metal–Oxide‐Semiconductor Field‐Effect Transistors

physica status solidi (b), EarlyView.
Schematic of a metal‐oxide‐semiconductor field‐effect transistor at pinch‐off together with the channel potential. We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation.
Marius Grundmann
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions

, 1999
We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also interact ...
Abrahams, Altshuler, Ando, Belitz, Castellani, Chui, Dobrosavljević, Goss Levy, Hanein, He, Heemskerk, Kravchenko, Kravchenko, Kravchenko, Kruithof, Marmorkos, Phillips, Popović, Pudalov, S. Das Sarma, Si, Simmons, Simonian, Sondhi, T.M. Klapwijk, Vinter, Vyrodov   +26 more
core   +1 more source

Effect of Adatom Energy on the Interfacial and Surface Morphology of Pulsed DC Sputtered Ruthenium Thin Films

Surface and Interface Analysis, EarlyView.
ABSTRACT In the present study, we have analyzed the growth profile of ruthenium (Ru) thin films, deposited using pulsed direct current (DC) magnetron sputtering technique, by varying the sputtering voltages in the range of 150–420 V. The grazing incidence X‐ray reflectivity (GIXRR), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and atomic ...
Shruti Gupta, C. Mukherjee, R. Kamparath, A. Bose, P. K. Yadav, R. K. Gupta, Mohammed H. Modi   +6 more
wiley   +1 more source