Results 121 to 130 of about 51,359 (241)

Wireless and Soft Pulse Wave Measurement Device with Printed Ferroelectric E‐tattoo Sensor

Advanced Sensor Research, Volume 5, Issue 3, March 2026.
ABSTRACT We propose a non‐invasive pulse wave monitoring system that integrates a fully printed, partially stretchable ferroelectric electronic tattoo (e‐tattoo) sensor with a soft, elastomer‐encapsulated, partially stretchable data transmission unit (DTU).
Karem Lozano Montero, Yayun Du, Ninja Kajas, Jacob Trueb, Mikko Peltokangas, Hany Arafa, Jin‐Tae Kim, Jianyu Gu, Remmi Calvo Guzman, Niku Oksala, Jiantong Li, Antti Vehkaoja, John A. Rogers, Matti Mäntysalo, Mika‐Matti Laurila   +14 more
wiley   +1 more source

Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter

Kongzhi Yu Xinxi Jishu, 2017
In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working ...
DENG Xiaoxiang, LI Peng, DAI Chaofan, YANG Ronghao   +3 more
doaj  

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

Advanced Science, Volume 13, Issue 16, 18 March 2026.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang, Chengqian Cui, Xiaoli Jing, Rui You, Mingjun Zhang, Jing Xu   +5 more
wiley   +1 more source

Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets

Applied Physics Express
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober to ...
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori   +9 more
doaj   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, Volume 13, Issue 13, 3 March 2026.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, Volume 13, Issue 18, 27 March 2026.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip

Applied Physics Express
400 metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a half-inch diamond substrate. The performance of each device was evaluated, and an H-terminated diamond MOSFET chip was created by connecting over 300 of the well ...
Keita Takaesu, Daisuke Sano, Iku Ota, Keiko Otsuka, Daisuke Takeuchi, Toshiharu Makino, Hitoshi Umezawa   +6 more
doaj   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IEEE Journal of the Electron Devices Society
The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki   +5 more
doaj   +1 more source

The Rise of Organic Electrochemical Transistors for Brain‐Inspired Neuromorphic Computing

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
This review provides a comprehensive overview of organic electrochemical transistors (OECTs) for brain‐inspired computing. From fundamental device physics and material engineering to system‐level integration, it highlights OECTs' unique mixed ionic‐electronic conduction capabilities.
Heejin Kim, Hyunhak Jeong, Gunuk Wang
wiley   +1 more source