Results 11 to 20 of about 51,359 (241)

Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]

Adv Mater
This work introduces a multi‐state probabilistic computing system based on Potts‐model p‐bits using stochastic switching floating body metal oxide semiconductor field effect transistors (FB‐MOSFETs). By employing drain‐voltage sharing and one‐hot sampling, the system achieves controllable probabilistic behavior.
Cheong S, Lee SH, Han J, Park JY, Shin DH, Jang YH, Shim SK, Kim S, Hwang CS, Han JK.   +9 more
europepmc   +2 more sources

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

IEEE Journal of the Electron Devices Society, 2016
We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal ...
Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida   +4 more
doaj   +1 more source

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

IEEE Access, 2023
SiC MOSFETs are suited for several power electronic converters as they reduce loss, increase efficiency, withstand high temperatures and switch faster. SiC MOSFETs are 2-quadrant switches as they can block voltage of only one polarity.
Nishant Anurag, Shabari Nath
doaj   +1 more source

Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation [PDF]

, 2004
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports.
Hoekstra, E., Klumperink, E.A.M., Kolhatkar, J.S., Salm, C., Schmitz, J., Wallinga, H., Wel, A.P. van der   +6 more
core   +3 more sources

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]

, 2009
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre   +2 more
core   +1 more source

Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells [PDF]

, 2005
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has ...
Asenov, A., Brown, A.R., Cheng, B., Roy, S., Samsudin, K.   +4 more
core   +1 more source

Effect of Source/Drain Lateral Straggle on Distortion and Intrinsic Performance of Asymmetric Underlap DG-MOSFETs

IEEE Journal of the Electron Devices Society, 2014
This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices.
Kalyan Koley, Arka Dutta, Samar K. Saha, Chandan K. Sarkar   +3 more
doaj   +1 more source

Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar

Energies, 2023
Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency.
Ismail Ataseven, Ilker Sahin, Salih Baris Ozturk   +2 more
doaj   +1 more source

A comparative study of hole and electron inversion layer quantization in MOS structures [PDF]

Serbian Journal of Electrical Engineering, 2010
In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied
Chaudhry Amit, Roy Nath Jatinder
doaj   +1 more source

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter [PDF]

, 2002
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter.
Asenov, A., Brown, A.R., Watling, J.R.
core   +1 more source