Results 21 to 30 of about 51,359 (241)

Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs

Sensors, 2012
A biocompatible and functional interface can improve the sensitivity of bioelectronics. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the surface
Shu-Ping Lin, Tien-Yin Chi, Tung-Yen Lai, Mao-Chen Liu   +3 more
doaj   +1 more source

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study [PDF]

, 2001
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs.
Asenov, A, Brown, AR, Davies, JH, Saini, S, Slavcheva, G   +4 more
core   +2 more sources

Influence and reinforcement of gate bias on total dose effect of SiC MOSFET

机车电传动, 2023
To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold ...
QIU Leshan, WU Zhikang, CHEN Yan, LI Chengzhan, BAI Yun   +4 more
doaj  

Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness [PDF]

, 2003
In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced
Asenov, A., Brown, A.R., Kaya, S.
core   +2 more sources

A Negative-Feedback Gate-Loop for Current Balancing Paralleled SiC MOSFETs Based on a Differential Mode Inductor

IEEE Access
Using paralleled SiC MOSFETs is an economical and commonly-used solution for high-power applications. However, the dynamic unbalanced currents during TURN-ON and TURN-OFF processes can pose the security and stability threats in the parallel connection of
Zheng Cao, Ruihong Zhang, Shaocong Wang, E. Peng   +3 more
doaj   +1 more source

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]

, 2005
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Asenov, A., Brown, A.R., Cheng, B., Roy, S., Samsudin, K.   +4 more
core   +1 more source

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate.
Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., de Groot, C.H., Gili, E., Hakim, M.M.A., Hall, S., Kunz, D., Uchino, T.   +6 more
core   +1 more source

Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors
Kang Hong, Xiao-Yuan Chen, Yu Chen, Ming-Shun Zhang, Jia-Lei Wang, Shan Jiang, Zhou Pang, Han-Mei Yang, Ning Xue, Hua-Yu Gou, Lei Zeng   +10 more
doaj   +1 more source

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

IET Power Electronics, 2022
Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly‐Si gate, resulting ...
Hengyu Yu, Jun Wang, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu, Bing Ji, Z. John Shen   +6 more
doaj   +1 more source