Results 31 to 40 of about 51,359 (241)

Electrically Active Defects in SiC Power MOSFETs

Energies, 2023
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric.
Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev   +3 more
doaj   +1 more source

Metallic behavior and related phenomena in two dimensions

, 2000
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field.
Abrahams, E., Abrahams, E., Altshuler, B. L., Altshuler, B. L., Belitz, D., Belitz, D., Benenti, G., Bishop, D. J., Bishop, D. J., Brunthaler, G., Castellani, C., Castellani, C., Castellani, C., Ceperley, D. M., Chakravarty, S., Chakravarty, S., Chui, S. T., Coleridge, P. T., Das Sarma, S., Das Sarma, S., Denteneer, P. J. H., Dobrosavljević, V., Dolan, G. J., Dolgopolov, V. T., Dolgopolov, V. T., Dultz, S. C., Dultz, S. C., D’Iorio, M., Efros, A. L., Elihu Abrahams, Feng, X. G., Finkelstein, A. M., Glozman, I., Gold, A., Goldman, A. M., Hamilton, A. R., Hanein, Y., Hanein, Y., Hanein, Y., Hanein, Y., He, S., Heemskerk, R., Ilani, S., Jiang, H. W., Kelly, M. J., Khmelnitskii, D. E., Khondaker, S. I., Kirkpatrick, T. R., Kirkpatrick, T. R., Kivelson, S. A., Klapwijk, T. M., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Lam, J., Laughlin, R. B., Leadbeater, M., Lee, P. A., Mason, W., Meir, Y., Mertes, K. M., Mertes, K. M., Mills, Jr., A. P., Myriam P. Sarachik, Okamoto, T., Papadakis, S. J., Papadakis, S. J., Papadakis, S. J., Phillips, P., Pikus, F. G., Popović, D., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Ren, Y., Ribeiro, E., Sarachik, M. P., Sarachik, M. P., Senz, V., Senz, V., Sergey V. Kravchenko, Shahar, D., Shahar, D., Shashkin, A. A., Shashkin, A. A., Shashkin, A. A., Shepelyansky, D. L., Si, Q., Simmons, M. Y., Simmons, M. Y., Simonian, D., Simonian, D., Sondhi, S. L., Tanatar, B., Thakur, J. S., Uren, M. J., Vitkalov, S. A., Wei, H. P., Yaish, Y., Yazdani, A., Yoon, J., Yoon, J.   +111 more
core   +1 more source

Indication of Non-equilibrium Transport in SiGe p-MOSFETs [PDF]

, 2000
No abstract ...
Asenov, A., Barker, J.R., Braithwaite, G., Evans, A.G.R., Kaya, S., Palmer, M., Parker, E.H.C., Waite, A., Watling, J.R., Whall, T.E., Zhao, Y.P.   +10 more
core   +1 more source

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology [PDF]

Informacije MIDEM, 2021
I. Mamatov, Y. Özçelep, F. Kaçar
doaj   +1 more source

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE Journal of the Electron Devices Society, 2020
2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions.
Aditi Agarwal, Kijeong Han, B. Jayant Baliga   +2 more
doaj   +1 more source

Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

IEEE Access, 2021
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation.
Uchechukwu A. Maduagwu, Viranjay M. Srivastava   +1 more
doaj   +1 more source

High performance III-V MOSFETs: a dream close to reality? [PDF]

, 2002
We have studied the performance potential of sub 100 nm compound MOSFETs with InGaAs channel and high-k gate insulator, using ensemble Monte Carlo simulations.
Asenov, A., Kalna, K., Yang, L.
core  

Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications [PDF]

, 2007
No abstract ...
Asenov, A., Droopad, R., Hill, R.J.W., Kalna, K., Long, A.R., Moran, D.A.J., Passlack, M., Thayne, I.G., Wilson, J.A.   +8 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Boron-doped diamond MOSFETs operating at temperatures up to 400°C

Functional Diamond
The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C.
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source