Results 51 to 60 of about 51,359 (241)

"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

, 2001
We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors \nu=1 and 2 and, for the first
A.A. Shashkin, A.M. Tikofsky, D.N. Sheng, E. Abrahams, F. F. Fang, F.F. Fang, H.C. Manoharan, H.W. Jiang, H.W. Jiang, J. Lapointe, M. D’Iorio, M. D’Iorio, M. D’Iorio, M. Hilke, M. R. Sakr, M.B. Santos, M.M. Fogler, Maryam Rahimi, P. T. Coleridge, P.J. Rodgers, P.T. Coleridge, P.T. Coleridge, P.T. Coleridge, P.T. Coleridge, R. L. Williams, R.B. Dunford, R.B. Dunford, S. V. Kravchenko, S.A. Kivelson, S.I. Dorozhkin, S.I. Dorozhkin, S.V. Kravchenko, S.V. Kravchenko, T. Ando, T.Y. Lin, V.J. Goldman, V.M. Pudalov, V.M. Pudalov   +37 more
core   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Active Autonomous Open-Loop Technique for Static and Dynamic Current Balancing of Parallel-Connected Silicon Carbide MOSFETs

Energies, 2023
Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in power electronics applications of medium- and high-power density. Usually, SiC MOSFETs are connected in parallel to increase power rating.
Nektarios Giannopoulos, Georgios Ioannidis, Georgios Vokas, Constantinos Psomopoulos   +3 more
doaj   +1 more source

Accelerating Discovery to Deployment: Argonne's Materials Engineering Research Facility (MERF) and Its Role in Scaling Materials Technologies for Water and Resource Solutions

Advanced Materials Technologies, EarlyView.
In this Perspective, we highlight the processing science and scale‐up capabilities of the Materials Engineering Research Facility (MERF) at the U.S. Department of Energy's Argonne National Laboratory, with an emphasis on practical solutions for sustainable water and critical resource recovery. We demonstrate how national laboratories bridge fundamental
Yuepeng Zhang, Bratin Sengupta, Xiaoao Shi, Haihui Pu, Jeffrey W. Elam, Gregory K. Krumdick, Jessica Durham Macholz, Allison Bennett Irion, Junhong Chen, Seth B. Darling   +9 more
wiley   +1 more source

Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems

IEEE Access
This study examines the reliability of several electronic components in a Vienna Rectifier configuration, which is a critical topology for power conversion systems.
Bharaneedharan Balasundaram, P. Suresh, Parvathy Rajendran, It Ee Lee, C. Ahamed Saleel   +4 more
doaj   +1 more source

An improved method for determining the inversion layer mobility of electrons in trench MOSFETs [PDF]

, 2003
For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm.
Heuvel, M.G.L. van den, Hijzen, E.A., Hueting, R.J.E., Zandt, M.A.A. in 't   +3 more
core   +3 more sources

Characterization and Design Framework for Micro‐ and Nanoscale Printed Metal Interconnects in Hybrid Electronic Systems

Advanced Materials Technologies, EarlyView.
This work establishes a framework for high‐resolution printed interconnects by coupling e‐jet printing control, multilayer deposition, and sintering optimization. Ink properties and printing speed influence particle stacking, while different sintering atmospheres drive distinct microstructural evolution.
Kaifan Yue, Siddharth Kurup, Rebecca Banner, Calib Lanier, Eric Vogel, Michael Filler, Kira Barton   +6 more
wiley   +1 more source

Comparative research on heavy ion irradiation effects of MOSFETs with different structures

AIP Advances
In a complex space environment, high-energy ions can cause radiation damage effects on MOSFETs, leading to functional errors and even permanent damage. This study uses the finite element method to establish floating-body MOSFETs with bulk silicon, PDSOI,
Jiaxin Wei, Jianhong Hao, Qiang Zhao, Jieqing Fan, Fang Zhang, Ke Li, Zhiwei Dong   +6 more
doaj   +1 more source

A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs

, 1997
We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase ...
A. J. Millis, A. L. Efros, D. Popović, D. Simonian, D. Simonian, E. Abrahams, E. Chow, P. T. Coleridge, S. L. Sondhi, S. Sachdev, S. V. Kravchenko, S. V. Kravchenko, S. V. Kravchenko, Song He, T. M. Rice, V. Dobrosavljević, X. C. Xie   +16 more
core   +1 more source

Low-Frequency Noise Phenomena in Switched MOSFETs [PDF]

, 2007
In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects.
Hoekstra, Eric, Klumperink, Eric A.M., Kolhatkar, Jay S., Nauta, Bram, Salm, Cora, Snoeij, Martijn F., Wallinga, Hans, Wel, Arnoud P. van der   +7 more
core   +3 more sources