Results 71 to 80 of about 51,359 (241)
Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
Advanced Science, EarlyView.A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source
EnergiesPower devices in series are low-voltage power devices used in medium- and high-voltage applications in a more direct program. However, when power devices in series are used, because of their electrical performance parameters or external circuit ...
Lucheng Sun +4 more
doaj +1 more source
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]
, 2019 The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M +6 more
core +1 more source
Advanced Science, EarlyView.This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley +1 more source
Compact Modeling for a Double Gate MOSFET [PDF]
, 2009 MOSFETs (metal-oxide-silicon field-effect transistors) are an integral part of modern electronics. Improved designs are currently under investigation, and one that is promising is the double gate MOSFET.
Ahmed, Saleem +8 more
core
Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs [PDF]
, 2000 Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm.
Asenov, A. +3 more
core +2 more sources
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices
Results in PhysicsTwo-dimensional (2D) materials have recently emerged as a pivotal force in the advancement of semiconductor technology, particularly as Moore’s law approaches its physical limits.
Jia-Yi Li +7 more
doaj +1 more source
Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers [PDF]
, 2008 We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T.
Gershenson, M. E. +5 more
core +1 more source