Results 151 to 160 of about 208,791 (200)
Some of the next articles are maybe not open access.

Underpowering NAND flash

Proceedings of the 50th Annual Design Automation Conference, 2013
MLC Flash memory is getting more popular in computer systems ranging from sensor networks and embedded systems to large-scale server systems. However, MLC flash has many reliability concerns, including the potential for corruption due to supply voltage fluctuations.
Hung-Wei Tseng 0001   +2 more
openaire   +2 more sources

NAND Flash Design

2012
A Solid-State-Disk is made up by a Flash controller plus a bunch of NAND Flash devices. This chapter focuses on design aspects of NAND chips. The information stored in each memory cell is fully analog because it is related to the number of electrons stored in the floating gate.
Luca Crippa, Rino Micheloni
openaire   +1 more source

Endurance limits of MLC NAND flash

2015 IEEE International Conference on Communications (ICC), 2015
An extensive effort is being undertaken by the flash community to develop signal processing and error-correction coding schemes that make use of soft information. Using experimental data from a state-of-the-art MLC flash device we demonstrate that the theoretical endurance improvement that such schemes can bring is limited.
Thomas P. Parnell   +4 more
openaire   +2 more sources

NAND Flash Memory: Challenges and Opportunities

Computer, 2013
NAND flash offers a range of compelling benefits that will keep attracting mobile and enterprise application developers as engineers tackle the hard problems of scaling the technology to sub-20 nm.
Yan Li, Khandker Quader
openaire   +1 more source

NAND Flash memories

2008
NAND Flash memories are the storage media used inside Solid State Drives (SSDs). Indeed, a single drive for enterprise applications can contain up to hundreds of Flash chips. Flash memories are non-volatile in the sense that they can retain the information even when powered off, but they wear out, i.e.
R. Micheloni, A. Marelli, R. Ravasio
openaire   +1 more source

Capacity of the MLC NAND Flash Channel

IEEE Journal on Selected Areas in Communications, 2016
In this paper, we develop a framework for evaluating the symmetric capacity of multilevel-cell (MLC) NAND flash devices while making very few assumptions regarding the underlying device physics. A set of recursive equations are derived that allow one to measure the symmetric capacity for any given page in a flash device using simple conditional ...
Thomas P. Parnell   +3 more
openaire   +1 more source

NAND Flash Innovations

IEEE Solid-State Circuits Magazine, 2013
Recent progress in mobile equipments (ex. smartphone and tablet-PC) requires further effort in developing higher density and higher reliability nonvolatile semiconductor memories. A breakthrough in the field of nonvolatile memories was the invention of the Flash memory by Prof. Fujio Masuoka [1].
openaire   +1 more source

Radiation effects on NAND Flash memories

2010
Electronic chips operating at sea level are constantly bombarded by a shower of high-energy neutrons, which originate from the interactions of cosmic rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics.
BAGATIN, MARTA   +3 more
openaire   +2 more sources

Evolution of NAND Flash Memory Interface

2007
In this paper, we describe the basics of NAND flash memory and describe the evolution of its interface to facilitate easy integration, to provide high bandwidth, to offer disk-like interface, and/or to guarantee interoperability.
Sang Lyul Min   +2 more
openaire   +2 more sources

Scaling Trends in NAND Flash

2018 IEEE International Electron Devices Meeting (IEDM), 2018
As the 2D NAND Flash scaling plateaued due to physical and electrical scaling limitations, 3D NAND emerged as a strong successor to continue the scaling trend. 3D NAND has rapidly achieved maturity and is already in the 3rd and 4th generation of technology with the total number of layers reaching 96 active layers.
K. Parat, A. Goda
openaire   +1 more source

Home - About - Disclaimer - Privacy