Results 161 to 170 of about 208,791 (200)
Some of the next articles are maybe not open access.
2012
This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell ...
openaire +1 more source
This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell ...
openaire +1 more source
A superblock-based flash translation layer for NAND flash memory
Proceedings of the 6th ACM & IEEE International conference on Embedded software - EMSOFT '06, 2006In NAND flash-based storage systems, an intermediate software layer called a flash translation layer (FTL)is usually employed to hide the erase-before-write characteristics of NAND flash memory. This paper proposes a novel superblockbased FTL scheme, which combines a set of adjacent logical blocks into a superblock.
Jeong-Uk Kang +3 more
openaire +1 more source
NAND Flash Application and Solution
IEEE Solid-State Circuits Magazine, 2013The NAND flash memory cell concept invented by Prof. Fujio Masuoka [1] inherently had advantages of the scalability, low cost, high yield, fast programming and low power operation compared with other non-volatile memories. In addition to the technological advantages, the advent of new mobile applications created a ?killer? application of the NAND flash
openaire +1 more source
2018
Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
Rino Micheloni +2 more
openaire +1 more source
Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
Rino Micheloni +2 more
openaire +1 more source
2016 IEEE 8th International Memory Workshop (IMW), 2016
NAND Flash memory became a standard semiconductor nonvolatile memory. Everyone in the world has widely used NAND Flash memory in many applications, such as digital camera, USB drive, portable music player, smartphone, and tablet-PC. The cloud data server started to use SSD (Solid State Drive) which was based on NAND Flash memory.
openaire +1 more source
NAND Flash memory became a standard semiconductor nonvolatile memory. Everyone in the world has widely used NAND Flash memory in many applications, such as digital camera, USB drive, portable music player, smartphone, and tablet-PC. The cloud data server started to use SSD (Solid State Drive) which was based on NAND Flash memory.
openaire +1 more source
3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
openaire +2 more sources
2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
openaire +1 more source
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
openaire +1 more source
2018
This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell ...
openaire +1 more source
This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell ...
openaire +1 more source