Results 161 to 170 of about 16,097 (194)

3D Charge Trap NAND Flash Memories

2016
This chapter starts off with 2 vertical channel architectures named BiCS (Bit Cost Scalable) and P-BiCS (Pipe-Shaped BiCS), respectively. BiCS was proposed for the first time by Toshiba in 2007, and another version called P-BiCS was presented in 2009 to improve retention, source selector performances and source line resistance.
Luca Crippa, Rino Micheloni
openaire   +1 more source

Test des Mémoires FLASH NAND

2009
Les mémoires non-volatiles et plus spécialement les mémoires Flash sont de plus en plus utilisées dans le contexte SoC. Cet article présente une étude préliminaire des mécanismes de défaillances pouvant affecter les mémoires Flash NAND.
Mauroux, Pierre-Didier, Virazel, Arnaud, Bosio, Alberto, Dilillo, Luigi, Girard, Patrick, Pravossoudovitch, Serge   +5 more
openaire   +1 more source

Evolution of NAND Flash Memory Interface

2007
In this paper, we describe the basics of NAND flash memory and describe the evolution of its interface to facilitate easy integration, to provide high bandwidth, to offer disk-like interface, and/or to guarantee interoperability.
Sang Lyul Min, Eyee Hyun Nam, Young Hee Lee   +2 more
openaire   +1 more source

Reliability issues of NAND Flash memories

2010
The continuous demand for NAND flash memories with higher performance and storage capabilities pushes the manufactures towards the limits of present technologies and to explore new solutions, both from the physical and the architectural point of view.
C. Zambelli, A. Chimenton, P. Olivo
openaire   +1 more source

Reliability of NAND Flash Memories

2010
The continuous demand for NAND flash memories with higher performance and storage capabilities pushes the manufactures towards the limits of present technologies and to explore new solutions, both from the physical and the architectural point of view. The memory reliability represents one of the major antagonist towards this un-stoppable technological ...
ZAMBELLI, Cristian, CHIMENTON, Andrea, OLIVO, Piero   +2 more
openaire   +1 more source

3D VG-Type NAND Flash Memories

2016
The common feature among the different 3D NAND solutions is constituted by very deep vertical (z direction) etching steps that define the Flash cells geometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack.
openaire   +1 more source

Mr. NAND Flash

2023
openaire   +1 more source

Recent Progress on 3D NAND Flash Technologies

Electronics (Switzerland), 2021
Akira Goda
exaly  

Flash Memory and NAND

2022
openaire   +1 more source

NAND Flash Memories

2017
Rino Micheloni, Luca Crippa
openaire   +1 more source