Results 91 to 100 of about 5,421 (173)
Ti3Al-Nb alloy (Ti-24Al-15Nb) was welded by a pulsed laser welding system without and with pure Nb filler metal. The results indicated that pure Nb filler metal had profound effects on the microstructures and mechanical properties of the laser-welded ...
Lin Wang +4 more
doaj +1 more source
Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials
A 3-D TCAD framework is proposed for simulating Negative Bias Temperature Instability (NBTI) in Silicon (Si) and Silicon Germanium (SiGe) channel p-MOSFETs.
Rao, Rakesh +17 more
core +1 more source
Impact of NBTI on the Performance of 35nm CMOS Digital Circuits [PDF]
The negative bias temperature instability (NBTI) of p-MOSFET has the greatest impact on the long term reliability of nano-scale devices and circuits.
Zwolinski, M +3 more
core +1 more source
Partitioned cache architectures for reduced NBTI-induced aging [PDF]
A Calimera +12 more
core +1 more source
Impact of NBTI on EMC behaviours of CMOS inverter
In this paper the Electromagnetic Robustness (EMR) of a CMOS inverter has been analyzed when the pFETs are submitted to negative bias temperature instability (NBTI).
N. Berbel +7 more
core +1 more source
Chemical structures and molecular weights of optimized NBTI hit compounds.
Chemical structures and molecular weights of optimized NBTI hit compounds.
Carla Vignaroli (407543) +12 more
core +1 more source
Aging Analysis and Degradation Prediction of PLL Circuits in 14-nm FinFET Technology
This work investigates the reliability and aging predictions in a 14-nm FinFET-based analog circuit under high-temperature conditions. Aging simulations and accelerated aging tests were carried out on key devices of phase-locked loop (PLL) circuits, with
Meng Li +6 more
doaj +1 more source
Ring oscillator switching noise under NBTI wearout
In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI).
Morata Cariñena, Marta +3 more
core
Research progress and challenges in the reliability of SiGe channel CMOS device
As complementary metal-oxide-semiconductor (CMOS) technology scales down to the 5 nm node and beyond, SiGe channels have become a promising solution for high-performance p-type field-effect transistor (pFET) due to their superior hole mobility, with ...
Guoqixin HUANG +2 more
doaj +1 more source
NbTi-based refractory alloys with additions of Co, Cr, and Ni represent an interesting medium-entropy alloy system with potential for protective oxide film formation, high strength, and ductility.
Carter, Jennifer, Kim, Tae Kyong John
core +1 more source

