Results 181 to 190 of about 216,475 (312)

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou   +4 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

Neuroimaging and biological markers of different paretic hand outcomes after stroke. [PDF]

open access: yesJ Neuroeng Rehabil
Wang Z   +6 more
europepmc   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

New Therapeutic Targets and Drugs for Schizophrenia Beyond Dopamine D2 Receptor Antagonists

open access: yesNeuropsychiatric Disease and Treatment
Aineng Peng,1 Jianbo Chai,2 Haiyuan Wu,1 Bing Bai,3 Huihui Yang,1 Weizhi He,1 Yonghou Zhao2 1Heilongjiang University of Chinese Medicine, Harbin, 150040, People’s Republic of China; 2Heilongjiang Mental Hospital, Harbin, 150036, People’s Republic of ...
Peng A   +6 more
doaj  

Memory Manufacture Under Microgravity (MMuM): In‐Space Manufactured ZnO‐Based Resistive Random Access Memory for Emerging Computing Application

open access: yesAdvanced Electronic Materials, EarlyView.
This paper presented ZnO‐based crossbar RRAMs by electrohydrodynamic (EHD) printing technology under in‐space manufacture environment as microgravity (µG). The crossbar structures of Ag/ZnO/Ag are fabricated under earth with in‐space microgravity. With the microgravity effect, a significant electroforming forming voltage reduced 89.3% as a storage ...
Yujian Huang   +8 more
wiley   +1 more source

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