Results 181 to 190 of about 216,475 (312)
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou+4 more
wiley +1 more source
An Open-Science Computational Model of Organelle Acidification to Integrate Putative Mechanisms of Synaptic Vesicle Acidification and Filling. [PDF]
Baraglia EC+4 more
europepmc +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu+4 more
wiley +1 more source
Neuroimaging and biological markers of different paretic hand outcomes after stroke. [PDF]
Wang Z+6 more
europepmc +1 more source
Polyphosphoinositide metabolism in rat brain: Effects of neuropeptides, neurotransmitters and cyclic nucleotides [PDF]
Jelle Jolles+3 more
openalex +1 more source
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang+8 more
wiley +1 more source
New Therapeutic Targets and Drugs for Schizophrenia Beyond Dopamine D2 Receptor Antagonists
Aineng Peng,1 Jianbo Chai,2 Haiyuan Wu,1 Bing Bai,3 Huihui Yang,1 Weizhi He,1 Yonghou Zhao2 1Heilongjiang University of Chinese Medicine, Harbin, 150040, People’s Republic of China; 2Heilongjiang Mental Hospital, Harbin, 150036, People’s Republic of ...
Peng A+6 more
doaj
This paper presented ZnO‐based crossbar RRAMs by electrohydrodynamic (EHD) printing technology under in‐space manufacture environment as microgravity (µG). The crossbar structures of Ag/ZnO/Ag are fabricated under earth with in‐space microgravity. With the microgravity effect, a significant electroforming forming voltage reduced 89.3% as a storage ...
Yujian Huang+8 more
wiley +1 more source