Results 141 to 150 of about 3,700 (175)

Plasma damage in HIMOS/spl trade/ non-volatile memories (NVM)

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004
In this paper, for the first time, plasma induced damage (PID) on floating gate based non-volatile memory cells is reported. Since the cells consist of a complex combination of tunnel and gate oxides, combined with a dense frame of metal interconnect, the chance that these cells may be affected by plasma damage is evident.
J. Ackaert, A. Lowe, E. De Backer, S. Boonen, T. Yao, J. Van Houdt, L. Haspeslagh   +6 more
openaire   +1 more source

Characterization of tunnel oxides for non-volatile memory (NVM) applications

International Semiconductor Device Research Symposium, 2003, 2004
The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used.
J. Ackaert, T. Vermculen, A. Lowe, S. Boonen, T. Yao, J. Prasad, M. Thomaso, J. Van Hood, R. Degraeve, L. Haspeslagb, P. Hendrickx   +10 more
openaire   +1 more source

Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004
In this paper, a new embedded OTP bit-cell (Neobit) is presented for one-/multiple-time programming (OTP/MTP) application, which is fabricated by using a generic logic process. Without additional processing or extra fabrication cost, this single-poly NVM can be implemented in various CMOS technologies such as logic, mixed-mode, analog, RF, HV and etc ...
R.S.C. Wang, R.S.J. Shen, C.C.H. Hsu
openaire   +1 more source

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO₂ Barriers

International Journal of High Speed Electronics and Systems, 2020
This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion
N. R. Butterfield, R. Mays, B. Khan, R. Gudlavalleti, F. C. Jain   +4 more
openaire   +1 more source

NVM Streaker: a fast and reconfigurable performance simulator for non-volatile memory-based memory architecture

The Journal of Supercomputing, 2018
The high density, low power consumption non-volatile memory (NVM) provides a promising DRAM alternative for the in-memory big-data processing applications, e.g., Spark, It is significant to simulate the behaviors when NVMs are deployed into the area of big-data processing before their widespread use in market.
Danqi Hu, Fang Lv, Chenxi Wang, Hui-Min Cui, Lei Wang, Ying Liu, Xiao-Bing Feng   +6 more
openaire   +1 more source

A review of emerging non-volatile memory (NVM) technologies and applications

Solid-State Electronics, 2016
Abstract This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory.
openaire   +1 more source

Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-Power Phase Change Non-Volatile Memory (NVM)

AIP Conference Proceedings, 2011
Using PH3 N‐type plasma doing (PLAD), the device characteristics of high performance vertical switch diode for 50 nm phase‐change NVM have been studied. Compared to the conventional beam line ion implantation, there are improvements of diode breakdown voltage (B.V.) and isolation B.V., respectively 20% and 41% by N‐type PLAD doping due to the higher ...
Min Yong Lee, H. S. Lee, Y. J. Ki, Y. S. Sohn, H. S. Kang, C. Y. Oh, J. W. Park, S. H. Jo, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki   +11 more
openaire   +1 more source

Fuzzy NVM memory with non-volatility management

2021
Dubeyko, Vyacheslav, Cargnini, Luis Vitório   +1 more
openaire   +1 more source

Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Materials Today Communications, 2023
J. Ajayan, P. Mohankumar, D. Nirmal, L.M.I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika   +9 more
openaire   +1 more source

Non-Volatile memory (NVM) technologies

Journal of Systems Architecture, 2016
Zili Shao, Yuan-Hao Chang
openaire   +1 more source