Results 21 to 30 of about 163,724 (263)
Extending Non-Volatile Operation to DRAM Cells
IEEE Access, 2013 This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei +2 more
doaj +1 more source
SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory
IEEE Access, 2020 The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan +4 more
doaj +1 more source
ENTT/ENTTR: A Family of Improved Emerging NVM-Based Trojan Triggers and Resets
Frontiers in Nanotechnology, 2022 Hardware Trojans in Integrated Circuits (ICs), that are inserted as hostile modifications in the design phase and/or the fabrication phase, are a security threat since the semiconductor manufacturing process is increasingly becoming globalized.
Karthikeyan Nagarajan +2 more
doaj +1 more source
A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories
Computers, 2017 Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
doaj +1 more source
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj +1 more source
On using network RAM as a non‐volatile buffer
Cluster Computing, 1999 File systems and databases usually make several synchronous disk write accesses in order to make sure that the disk always has a consistent view of their data, so that it can be recovered in the case of a system crash. Since synchronous disk operations are slow, some systems choose to employ asynchronous disk write operations that improve performance ...
Πνευματικατος Διονυσιος(http://users.isc.tuc.gr/~dpnevmatikatos) +4 more
openaire +2 more sources
Disaggregating non-volatile memory for throughput-oriented genomics workloads [PDF]
, 2018 Massive exploitation of next-generation sequencing technologies requires dealing with both: huge amounts of data and complex bioinformatics pipelines.
A Kawalia +5 more
core +1 more source
IEEE Access, 2020 One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one ...
Prashanth Barla +2 more
doaj +1 more source
Design of In-Memory Parallel-Prefix Adders
Journal of Low Power Electronics and Applications, 2021 Computational methods in memory array are being researched in many emerging memory technologies to conquer the ‘von Neumann bottleneck’. Resistive RAM (ReRAM) is a non-volatile memory, which supports Boolean logic operation, and adders can be implemented
John Reuben
doaj +1 more source
HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems [PDF]
, 1968 Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed.
Adegbija, Tosiron, Kuan, Kyle
core +4 more sources