Results 171 to 180 of about 1,757,496 (307)

Ultrafast in‐memory computing and highly efficient deep neural networks driven by phase‐change memory materials with partially amorphous state transitions

InfoScience, EarlyView.
This work addresses challenges including the nonlinear weight‐conductance update and the trade‐off between increasing melting uniformity and reducing solid‐to‐liquid transition time. It utilizes all four melting states to create an integrated framework for attaining in‐memory computing and deep neural network applications. The framework achieves a near‐
Kian‐Guan Lim, Shao‐Xiang Go, Qiang Wang, Dong‐Gwan Kim, Chan‐Hwi Baek, Qishen Wang, Tae Hoon Lee, Desmond K. Loke   +7 more
wiley   +1 more source

Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y₂O₃ RRAM Devices Using Mono-Ethanolamine Additives. [PDF]

Materials (Basel)
Heo S, Choi S, Lee S, Cho Y, Bae JH, Kang IM, Kim K, Lee WY, Jang J.   +8 more
europepmc   +1 more source

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films. [PDF]

ACS Omega, 2019
Guo X, Liu J, Cao L, Liang Q, Lei S.
europepmc   +1 more source

Organic neuromorphic electronics powering intelligent sensory and edge computing systems

InfoMat, EarlyView.
Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo, Minji Chung, Hyun Woo Song, Seoyoung Kim, Eun Kwang Lee, Joon Hak Oh   +5 more
wiley   +1 more source

Neuron Circuit Based on a Split-gate Transistor with Nonvolatile Memory for Homeostatic Functions of Biological Neurons. [PDF]

Biomimetics (Basel)
Kim H, Woo SY, Kim H.
europepmc   +1 more source

Effect of Adatom Energy on the Interfacial and Surface Morphology of Pulsed DC Sputtered Ruthenium Thin Films

Surface and Interface Analysis, EarlyView.
ABSTRACT In the present study, we have analyzed the growth profile of ruthenium (Ru) thin films, deposited using pulsed direct current (DC) magnetron sputtering technique, by varying the sputtering voltages in the range of 150–420 V. The grazing incidence X‐ray reflectivity (GIXRR), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and atomic ...
Shruti Gupta, C. Mukherjee, R. Kamparath, A. Bose, P. K. Yadav, R. K. Gupta, Mohammed H. Modi   +6 more
wiley   +1 more source

Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States. [PDF]

Nanomaterials (Basel)
Jeon J, Cho K, Kim S.
europepmc   +1 more source

Tight Evaluation of Real-Time Task Schedulability for Processor's DVS and Nonvolatile Memory Allocation. [PDF]

Micromachines (Basel), 2019
Nam SA, Cho K, Bahn H.
europepmc   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces. [PDF]

Sci Rep, 2019
Ban C, Wang X, Zhou Z, Mao H, Cheng S, Zhang Z, Liu Z, Li H, Liu J, Huang W.   +9 more
europepmc   +1 more source