Results 201 to 210 of about 21,030 (245)
Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision. [PDF]
Nat CommunHuo J +8 more
europepmc +1 more source
Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]
ACS Appl Mater InterfacesNoh HY +6 more
europepmc +1 more source
Memristive Behavior in Carrier Accumulation-Based Optical Modulators. [PDF]
Nano LettKorneluk A, Brańko K, Stefaniuk T.
europepmc +1 more source
Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]
ACS OmegaChen HC +4 more
europepmc +1 more source
Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub>. [PDF]
Sci AdvShen J +14 more
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Nonvolatile semiconductor memory
Microprocessing and Microprogramming, 1982Abstract The realization of nonvolatile semiconductor memory products has lead to an evolution of denser and more powerful devices. The semiconductor technology utilized affect the device characteristics such as size, power, and speed. The technology also determines what physical mechanisms are used in the detailed memory cells.
Raphael Klein, Wallace E. Tchon
openaire +2 more sources
Proceedings of the 2009 International Conference on Computer-Aided Design, 2009
The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests.
Yenpo Ho, Garng M. Huang, Peng Li
openaire +1 more source
The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests.
Yenpo Ho, Garng M. Huang, Peng Li
openaire +1 more source
Ge-nanodot multilayer nonvolatile memories
Nanotechnology, 20081-5 period multilayers of Ge nanodots (NDs) for nonvolatile memories have been self-assembled by ion beam sputtering deposition of an ultra-small amount of Ge between SiO(2) layers at room temperature without post-annealing. High-resolution transmission electron microscopy demonstrates the existence of Ge ND layers well defined with respect to the SiO ...
Seung Hui, Hong +4 more
openaire +2 more sources
2017
Chapter 8 is the first of three chapters that form a core application for the devices we discussed in Part II, in embedded NVMs. In this chapter, we give an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs.
Yanjun Ma, Edwin Kan
openaire +1 more source
Chapter 8 is the first of three chapters that form a core application for the devices we discussed in Part II, in embedded NVMs. In this chapter, we give an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs.
Yanjun Ma, Edwin Kan
openaire +1 more source
Black phosphorus nonvolatile transistor memory
Nanoscale, 2016We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10(4 ...
Dain, Lee +5 more
openaire +2 more sources