Results 101 to 110 of about 2,359,316 (241)
GaAs integrated circuits with normally-off processes : a real market opportunity [PDF]
GaAs normally-off FET processes have now reached a maturity level such that their application domains extend to VLSI digital circuits, analogue and mixed-signal analogue/digital circuits. They represent a real market opportunity for the GaAs industry and
Gourrier, Serge
core +1 more source
Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. [PDF]
He S +9 more
europepmc +1 more source
Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley +1 more source
Low Leakage Normally-off Tri-gate GaN MISFET
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off ...
Matioli, Elison +5 more
core +1 more source
Quasi-Normally-Off AlGaN/GaN HEMTs with Strained Comb Gate for Power Electronics Applications
The quasi-normally-off operation of AlGaN/GaN HEMTs was realized using strain engineering. The dual-layer silicon nitride (SiNx) stressors applied compression to the gate region in devices, and the introduced compression translated to piezoelectric ...
Chan, Mansun +5 more
core +1 more source
Ascidian Ciona larvae initially show strong clockwise tail twisting, which is largely corrected during development. However, a small residual twist remains. This study shows that organized helical myofibrils in tail muscles mechanically stabilize this residual asymmetry, preventing complete restoration of bilateral symmetry and revealing how embryos ...
Yuki S. Kogure +3 more
wiley +1 more source
281 σ.Σκοπός της παρούσας διπλωματικής εργασίας είναι η μελέτη, ο σχεδιασμός, η προσομοίωση και η κατασκευή κυκλωμάτων οδήγησης κατάλληλα για τους ημιαγωγικούς διακόπτες JFETs καρβιδίου του πυριτίου.
Stefas, Pantelis E. +1 more
core +1 more source
A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
S.141-144We present a new approach for normally-off transistors based on a recess leading to a laterally induced positive threshold voltage. The fabrication process is demonstrated to yield devices with positive threshold voltage.
Rüster, Joachim +8 more
core +1 more source
Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT
Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated.
Yitai Zhu +8 more
doaj +1 more source

