Results 91 to 100 of about 1,694,370 (293)
Implications of the interface effects in the normally-off type GaAs MESFETs [PDF]
, 1978 The variations of I- V characteristics under substrate bias are compared for normally-on and normally-off type planar GaAs-MESFETs with long-channel. The experimental results are interpreted by superimposing to the Schottky gate space-charge region both ...
Nuzillat, G. +3 more
core +1 more source
The human gut microbiome across the life course
FEBS Letters, EarlyView.Despite significant individual variation and continuous change throughout life, the human gut microbiome follows some life stage‐specific trends. This article provides a brief overview of how gut microbiome composition shifts across different phases of life. Created in BioRender. Özkurt, E. (2026) https://BioRender.com/8q4nrnc.
Alise J. Ponsero +4 more
wiley +1 more source
Normally-off transistor topologies in gallium nitride technology [PDF]
, 2020 Devices based on group-III-nitride compound semiconductors (AlN, InN, GaN) are gaining more and more momentum in modern electronics. Based on their excellent material properties like high critical electric fields, carrier concentrations and mobilities ...
Lükens, Gerrit
core +1 more source
Degradation mechanism of the von Willebrand factor A2 domain by nattokinase
FEBS Letters, EarlyView.Nattokinase, a natto‐derived protease, exhibits potent antithrombotic effects. This study demonstrates that nattokinase directly cleaves the von Willebrand factor (vWF) A2 domain in vitro. Unlike the native regulator ADAMTS13, nattokinase degrades folded vWF independently of shear stress.
Ryuichi Hyakumoto +3 more
wiley +1 more source
P-doped region below the AlGaN/GaN interface for normally-off HEMT [PDF]
, 2014 International audienceDevelopment of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate.
Frederic Morancho +9 more
core +1 more source
FEBS Letters, EarlyView.An unexpected alternative interaction site for ethyl viologen was identified in formate dehydrogenase 1 from Methylorubrum extorquens. Combined mutagenesis, kinetic analysis, and docking revealed that aromatic residues near an iron–sulfur cluster enable flavin mononucleotide‐independent electron transfer, offering a framework for engineering improved ...
Eleni G. Poloniataki, Yong Hwan Kim
wiley +1 more source
Micro and Nano Engineering, 2020 The hydrogen plasma treatment of single crystal diamond was carried out by microwave plasma chemical vapor deposition equipment, and the normally-off hydrogen-terminated diamond field-effect transistors (FETs) with different gate lengths were prepared by
Chi Sun +4 more
doaj +1 more source
A Normally-Off GaN HEMT with Large Drain Current
IEEJ Transactions on Electronics, Information and Systems, 2010 We present high performance normally-off GaN MIS-HEMTs. Devices with n-GaN/i-AlN/n-GaN cap layer, recessed gate and insulated gate structure show high drain current and complete normally-off operation. A maximum drain current and threshold voltage are 800 mA/mm and +3 V, respectively. The off-state breakdown voltage is over 320 V.
Kanamura, Masahito +4 more
openaire +1 more source
FEBS Letters, EarlyView.The physical dimensions and shape of bacterial cells define the surface area available to acquire nutrients and the volume available for synthesizing proteins and DNA. Here, we use computational systems biology to decode the importance of cell geometry as a major determinant of prokaryotic phenotype, including growth rate and metabolic efficiency. This
Ross P. Carlson +6 more
wiley +1 more source
Low Leakage Normally-off Tri-gate GaN MISFET [PDF]
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off ...
Matioli, Elison +2 more
core +1 more source