Results 71 to 80 of about 1,694,370 (293)
Therapeutic Apheresis and Dialysis, EarlyView.ABSTRACT Introduction This final analysis of a multicenter, prospective postmarketing surveillance study evaluated the safety of daprodustat in patients with chronic kidney disease anemia in routine clinical practice in Japan. Methods Patients who initiated daprodustat between September 2020 and July 2022 were registered.
Tadao Akizawa +7 more
wiley +1 more source
Electronics Letters, 2021 Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna.
Hidemasa Takahashi +9 more
doaj +1 more source
FEBS Letters, EarlyView.Enteropathogenic E. coli (EPEC) infects the human intestinal epithelium, resulting in severe illness and diarrhoea. In this study, we compared the infection of cancer‐derived cell lines with human organoid‐derived models of the small intestine. We observed a delayed in attachment, inflammation and cell death on primary cells, indicating that host ...
Mastura Neyazi +5 more
wiley +1 more source
HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation [PDF]
, 2014 2 pagesInternational audienceAlGaN/GaN HEMTs are promising candidates for high frequency applications with high power and low noise. While switching applications demand normally-off operation, conventional HEMTs are normally-on.
Morancho, Frédéric +4 more
core +4 more sources
Reciprocal control of viral infection and phosphoinositide dynamics
FEBS Letters, EarlyView.Phosphoinositides, although scarce, regulate key cellular processes, including membrane dynamics and signaling. Viruses exploit these lipids to support their entry, replication, assembly, and egress. The central role of phosphoinositides in infection highlights phosphoinositide metabolism as a promising antiviral target.
Marie Déborah Bancilhon, Bruno Mesmin
wiley +1 more source
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs [PDF]
, 2022 Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin +11 more
core +1 more source
Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off [PDF]
, 2023 National audienceThe technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present
Reig, Benjamin +9 more
core +4 more sources
A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV
Applied Physics ExpressWe demonstrated a multi-fin normally-off β -Ga _2 O _3 vertical transistor with a breakdown voltage exceeding 10 kV, a specific on-resistance of 289 mΩ·cm ^2 , and a power figure-of-merit of 0.35 GW cm ^−2 .
Daiki Wakimoto +6 more
doaj +1 more source
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
CES Transactions on Electrical Machines and Systems, 2017 Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
doaj +1 more source
A novel normally-off GaN power tunnel junction FET [PDF]
, 2011 We demonstrate AlGaN/GaN tunnel junction FETs (TJ-FET) featuring a metal-2DEG Schottky junction at the source. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing to a current controlling scheme different from the
Yuan, Li +9 more
core +1 more source