Results 61 to 70 of about 2,359,316 (241)
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
CES Transactions on Electrical Machines and Systems, 2017 Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
doaj +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Numerous international studies have reported declines in new cancer diagnoses, delayed diagnoses and disruptions in cancer treatment following the implementation of COVID‐19 pandemic public health measures, raising concerns that these effects may ultimately contribute to increased cancer mortality.
Friederike Erdmann +8 more
wiley +1 more source
Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel
, 2014 International audienceGallium nitride based High Electron Mobility Transistors (HEMT) are powerful candidates for high frequency and high power applications.
Morancho, Frédéric +4 more
core +3 more sources
Referral Patterns and Diagnostic Timeliness in Pediatric Cancer: A Hospital‐Based Study in Indonesia
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Timely diagnosis and treatment are critical for improving survival among children with cancer. In low‐ and middle‐income countries (LMICs), delays are common and may be influenced by fragmented referral pathways and diagnostic limitations.
Nur Melani Sari +5 more
wiley +1 more source
P-doped region below the AlGaN/GaN interface for normally-off HEMT [PDF]
, 2014 International audienceDevelopment of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate.
Frederic Morancho +9 more
core +1 more source
Energies, 2020 A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate ...
Hsiang-Chun Wang +4 more
doaj +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Relapsed and/or refractory (R/R) pediatric acute leukemia carries a dismal prognosis, largely driven by chemoresistance to conventional salvage therapy. The BH3‐mimetic venetoclax, combined with chemotherapy or hypomethylating agents, has demonstrated efficacy in small clinical trials.
Katherine S. Colman +9 more
wiley +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Cytomegalovirus (CMV) is a recognized trigger of immune thrombocytopenia (ITP); however, its incidence and impact on disease course in children remain controversial. Therefore, we aimed to characterize the clinical course of pediatric patients with CMV‐associated ITP.
Oded Gilad +9 more
wiley +1 more source
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay +6 more
core +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Reduced bone mineral density (BMD) has been reported in survivors of childhood and young adult acute lymphoblastic leukaemia (ALL); however, data from cohorts treated with contemporary protocols and including matched controls remain limited.
Karen Schow Jensen +10 more
wiley +1 more source