Results 41 to 50 of about 375,929 (286)
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
IEEE Journal of the Electron Devices Society, 2017 High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki +6 more
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Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
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Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam +5 more
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, 2020 $\beta$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits.
Biswas, Dipankar +4 more
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How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies [PDF]
, 2016 The present paper is implementing a numerical application of the Boltzmann–Arrhenius–Zhurkov (BAZ) model and relates to the statistic reliability model derived from the Transition State Theory paradigm.
Bensoussan, Alain
core +1 more source
Normally-off GaN Transistors for Power Applications
Journal of Physics: Conference Series, 2014 Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V.
O Hilt +6 more
openaire +2 more sources
Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage
IEEE Access, 2023 Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin +5 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha +6 more
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Switching performance comparison of a power switch in a Cascode Configuration using a SuperJunction MOSFET [PDF]
, 2016 51st International Universities' Power Engineering Conference, 6-9 September 2016, Coimbra (Portugal)This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch ...
Castro Álvarez, Ignacio +4 more
core +1 more source
Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs
Crystals, 2020 A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction
Ki-Sik Im +5 more
doaj +1 more source