Results 41 to 50 of about 2,359,316 (241)

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

open access: yesIEEE Access, 2023
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin   +5 more
doaj   +1 more source

ARCHIVING, SECRECY AND OFF-SITE RESEARCH

open access: yes, 2019
With: Cécile Boex, Leyla Dakhli, Omar Dewachi, Carolina Kobelinsky, Shourideh Molavi, William Walters, Shela Sheikh. See full abstracts below. Off-Site · "Archiving, secrecy and off-site research", A workshop of the ERC Off-Site - 9&10 September 2019 ...
Off-Site
core   +1 more source

Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

open access: yesIEEE Journal of the Electron Devices Society, 2020
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha   +6 more
doaj   +1 more source

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

open access: yes, 2021
We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen   +19 more
core   +1 more source

Recent advances in diamond MOSFETs with normally off characteristics

open access: yesFunctional Diamond
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li   +7 more
doaj   +1 more source

Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

open access: yesCrystals, 2020
A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction
Ki-Sik Im   +5 more
doaj   +1 more source

European Standard Clinical Practice Guideline and EXPeRT Recommendations for the Diagnosis and Management of Gastroenteropancreatic Neuroendocrine Neoplasms in Children and Adolescents

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Pediatric gastroenteropancreatic neuroendocrine neoplasms (GEP‐NENs) are extremely rare and clinically heterogeneous. Management has largely been extrapolated from adult practice. This European Standard Clinical Practice Guideline (ESCP), developed by the EXPeRT network in collaboration with adult NEN experts, provides (adult) evidence ...
Michaela Kuhlen   +23 more
wiley   +1 more source

Solid Pseudopapillary Neoplasm of the Pancreas in Children and Adolescents: Expert Recommendations

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Solid pseudopapillary neoplasm of the pancreas (SPN) is a rare low‐grade malignant exocrine pancreatic tumor, mostly discovered during the second decade of life in females, with a very good prognosis, provided microscopically complete surgical excision is achieved.
Sabine Irtan   +18 more
wiley   +1 more source

Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

open access: yesIEEE Journal of the Electron Devices Society, 2017
A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be ...
Stephen A. O. Russell   +6 more
doaj   +1 more source

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

open access: yesIEEE Access, 2023
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun   +6 more
doaj   +1 more source

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