Results 41 to 50 of about 1,694,370 (293)

Normally‐off AlGaN/GaN power tunnel‐junction FETs [PDF]

, 2012
We present normally-off AlGaN/Gan power tunnel-junction FETs (TJ-FETs) with high breakdown voltage, low off-state leakage current and low specific on-resistance. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing
Yuan, Li, Zhou, Qi, Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou, Chen, Hongwei, Hongwei Chen, Li Yuan, Qi Zhou   +9 more
core   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

AIP Advances, 2020
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian   +9 more
doaj   +1 more source

Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

Materials Research Express, 2021
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj   +1 more source

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

IEEE Journal of the Electron Devices Society, 2020
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang   +8 more
doaj   +1 more source

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Advanced Electronic Materials, 2023
Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Xiaohua Zhu, Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada   +11 more
doaj   +1 more source

High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates

IEEE Journal of the Electron Devices Society, 2023
High temperature operation of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) was demonstrated.
Hanwool Lee, Hojoon Ryu, Junzhe Kang, Wenjuan Zhu   +3 more
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
doaj   +1 more source

Normally-On and Normally-Off SiC JFETs Gate Drive Circuits: Application to Boost Converter for Photovoltaic Systems [PDF]

, 2013
281 σ.Σκοπός της παρούσας διπλωματικής εργασίας είναι η μελέτη, ο σχεδιασμός, η προσομοίωση και η κατασκευή κυκλωμάτων οδήγησης κατάλληλα για τους ημιαγωγικούς διακόπτες JFETs καρβιδίου του πυριτίου.
Stefas, Pantelis E., Στέφας, Παντελής Ε.   +1 more
core   +1 more source