Results 21 to 30 of about 2,359,316 (241)
High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren +8 more
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IEEE Journal of the Electron Devices Society, 2018 In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi +3 more
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Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Advanced Photonics Research, 2022 Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon +2 more
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Normally-off GaN transistors for power applications [PDF]
, 2014 Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate.
Zhytnytska, R. +6 more
core +1 more source
Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
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IEEE Journal of the Electron Devices Society, 2020 Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng +5 more
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HEMT GaN Normally Off Reliability comparison
, 2021 International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
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HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation
, 2014 2 pagesInternational audienceAlGaN/GaN HEMTs are promising candidates for high frequency applications with high power and low noise. While switching applications demand normally-off operation, conventional HEMTs are normally-on.
Morancho, Frédéric +4 more
core +4 more sources
IEEE Journal of the Electron Devices Society, 2018 In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu +6 more
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Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
AIP Advances, 2020 In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin +9 more
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