Results 21 to 30 of about 375,929 (286)

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]

, 2014
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah, Brown, Raphael, Li, Xu, Macfarlane, Douglas, Ternent, Gary, Thayne, Iain, Wasige, Edward, Zhou, Haiping   +7 more
core   +1 more source

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

IEEE Journal of the Electron Devices Society, 2019
High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao   +8 more
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation

Advanced Photonics Research, 2022
Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon, Wan Sik Hwang, Myunghun Shin   +2 more
doaj   +1 more source

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT [PDF]

, 2017
In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure.
Castellazzi, Alberto, Oeder, Thorsten, Pfost, Martin   +2 more
core   +1 more source

Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

IEEE Journal of the Electron Devices Society, 2018
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im, Gokhan Atmaca, Chul-Ho Won, Raphael Caulmilone, Sorin Cristoloveanu, Yong-Tae Kim, Jung-Hee Lee   +6 more
doaj   +1 more source

Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO3/SrTiO3 interfaces [PDF]

, 2017
The authors gratefully acknowledge the support from the state of Bavaria as well as from the Deutsche Forschungsgemeinschaft (FOR1162 and SFB1170).We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures.
Claessen, R., Frank, M., Gabel, J., Hartmann, F., Höfling, Sven, Kuhn, S., Leikert, B., Maier, P., Scheiderer, P., Sing, M., Worschech, L.   +10 more
core   +2 more sources

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Advanced Electronic Materials, 2023
Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Xiaohua Zhu, Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada   +11 more
doaj   +1 more source

Experimental and analytical performance evaluation of SiC power devices in the matrix converter [PDF]

, 2014
With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices.
Castellazzi, Alberto, Safari, Saeed, Wheeler, Patrick   +2 more
core   +1 more source

Extending the bounds of performance in E-mode p-channel GaN MOSHFETs [PDF]

, 2016
An investigation of the distribution of the electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why a high |Vth| requires a reduction of the thickness of oxide and the GaN channel layer.
De Souza, M.M., Kumar, A.
core   +1 more source