Results 31 to 40 of about 1,694,370 (293)
Results in Physics, 2021 In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang +7 more
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Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
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ARCHIVING, SECRECY AND OFF-SITE RESEARCH [PDF]
, 2019 With: Cécile Boex, Leyla Dakhli, Omar Dewachi, Carolina Kobelinsky, Shourideh Molavi, William Walters, Shela Sheikh. See full abstracts below. Off-Site · "Archiving, secrecy and off-site research", A workshop of the ERC Off-Site - 9&10 September 2019 ...
Off-Site
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High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren +8 more
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IEEE Journal of the Electron Devices Society, 2018 In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi +3 more
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Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Advanced Photonics Research, 2022 Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon +2 more
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MOSFET with Normally-Off Operation [PDF]
, 2019 A normally-off lateral Ga2O3 metal-oxide-semiconductor field effect transistor (MOSFETs) was fabricated on a single crystal β-Ga2O3 (010) substrate. The top Ga2O3 layer forming a channel was grown by plasma-assisted molecular beam epitaxy, and the doping
Man Hoi Wong +9 more
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THE IRANIAN REVOLUTION AND ITS AFTERMATH [PDF]
, 2022 With: Kamran Matin, Shahrzad Mojab, Kaveh Ehsani, Nasser Mohajer, Naghmeh Sohrabi, Orkideh Behrouzan, Shokoufeh Sakhi, Bahar Majdzadeh, Omid Montazeri, Marie Ladier-Fouladi, Fatemeh Masjedi, Arang Keshavarzian, Ahmad Moradi, Yasmin Nadir, Natalia ...
Off-Site
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Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
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IEEE Journal of the Electron Devices Society, 2020 Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng +5 more
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