Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication [PDF]
MicromachinesThis study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process.
Yinmiao Yin +4 more
doaj +2 more sources
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini +3 more
doaj +3 more sources
Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length [PDF]
Nanoscale Research Letters, 2017 We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien +7 more
doaj +2 more sources
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors [PDF]
Materials, 2019 Fabrizio Roccaforte +2 more
exaly +2 more sources
Normally-OFF Diamond Reverse Blocking MESFET [PDF]
IEEE Transactions on Electron Devices, 2021 Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature.
J. Canas +6 more
openaire +3 more sources
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
doaj +1 more source
Prospects and Development of Vertical Normally-off JFETs in SiC
Journal of Telecommunications and Information Technology, 2023 This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations.
Mietek Bakowski
doaj +1 more source
Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zeyang Ren +7 more
doaj +1 more source
Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
doaj +1 more source
A 3.4pJ FeRAM-enabled D flip-flop in 0.13µm CMOS for nonvolatile processing in digital systems [PDF]
, 2013 Nonvolatile processing-continuously operating a digital circuit and retaining state through frequent power interruptions-creates new applications for portable electronics operating from harvested energy and high-performance systems managing power by ...
Amerasekera, Ajith +2 more
core +3 more sources