Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors [PDF]
Micromachines, 2022 We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate ...
Idriss Abid +4 more
doaj +2 more sources
Normally-OFF Diamond Reverse Blocking MESFET [PDF]
IEEE Transactions on Electron Devices, 2021 Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature.
J. Canas +6 more
openaire +5 more sources
Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage [PDF]
Micromachines, 2021 In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP ...
Xiaoyu Xia, Zhiyou Guo, Huiqing Sun
doaj +2 more sources
A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation [PDF]
Membranes, 2021 This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones.
Gene Sheu +4 more
doaj +2 more sources
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator [PDF]
Membranes, 2021 A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu +7 more
doaj +2 more sources
Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing [PDF]
Nanomaterials, 2023 Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era.
Yeongkwon Kim +2 more
doaj +2 more sources
Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer [PDF]
Micromachines, 2022 A normally-off β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an n-type low-doped body layer. The low-doped
Chan-Hee Jang +2 more
doaj +2 more sources
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate [PDF]
Micromachines, 2022 A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability.
Hsiang-Chun Wang +5 more
doaj +2 more sources
Normally-off GaN Transistors for Power Applications [PDF]
Journal of Physics: Conference Series, 2014 Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V.
Hilt, O. +6 more
openaire +3 more sources
Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zeyang Ren, Kai Su, Jinfeng Zhang
exaly +3 more sources