Results 11 to 20 of about 2,359,316 (241)
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Oliver Hilt +2 more
exaly +3 more sources
Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length [PDF]
Nanoscale Research Letters, 2017 We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien +7 more
doaj +2 more sources
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors [PDF]
Materials, 2019 Fabrizio Roccaforte +2 more
exaly +2 more sources
Normally-off Diamond Reverse Blocking MESFET [PDF]
, 2021 Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond.
Eon, D +20 more
core +2 more sources
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
doaj +1 more source
Prospects and Development of Vertical Normally-off JFETs in SiC
Journal of Telecommunications and Information Technology, 2023 This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations.
Mietek Bakowski
doaj +1 more source
Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zeyang Ren +7 more
doaj +1 more source
Results in Physics, 2021 In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang +7 more
doaj +1 more source
Un interrupteur GaN HEMT normally-off grâce à des ions fluor implantés sous l'interface AlGaN/GaN [PDF]
, 2014 National audienceAlGaN/GaN HEMTs are very promising candidates for high frequency applications with high power and low noise. Unfortunately, while switching applications strongly demand normally-off operation, conventional HEMTs are normally-on.
Morancho, Frédéric +4 more
core +4 more sources
Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
doaj +1 more source