Results 11 to 20 of about 379,352 (250)
An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices [PDF]
Scientific Reports, 2022 Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material ...
Reem Alhasani +6 more
doaj +2 more sources
Advanced Electronic Materials, 2023 Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Chengming Li
exaly +2 more sources
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Oliver Hilt +2 more
exaly +3 more sources
Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication [PDF]
MicromachinesThis study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process.
Yinmiao Yin +4 more
doaj +2 more sources
Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length [PDF]
Nanoscale Research Letters, 2017 We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien +7 more
doaj +2 more sources
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors [PDF]
Materials, 2019 Fabrizio Roccaforte +2 more
exaly +2 more sources
Normally-OFF Diamond Reverse Blocking MESFET [PDF]
IEEE Transactions on Electron Devices, 2021 Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature.
J. Canas +6 more
openaire +3 more sources
Prospects and Development of Vertical Normally-off JFETs in SiC
Journal of Telecommunications and Information Technology, 2023 This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations.
Mietek Bakowski
doaj +1 more source
Results in Physics, 2021 In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang +7 more
doaj +1 more source
Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
doaj +1 more source