Results 51 to 60 of about 1,694,370 (293)
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
IEEE Journal of the Electron Devices Society, 2017 High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki +6 more
doaj +1 more source
Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam +5 more
doaj +1 more source
Algorithms for computing normally hyperbolic invariant manifolds [PDF]
, 1997 An effcient algorithm is developed for the numerical computation of normally hyperbolic invariant manifolds, based on the graph transform and Newton's method.
Vegter, G., +10 more
core +1 more source
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer [PDF]
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay +6 more
core +1 more source
Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage
IEEE Access, 2023 Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin +5 more
doaj +1 more source
RECESSED-GATE NORMALLY-OFF GaN MOSFET TECHNOLOGIES [PDF]
, 2013 Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11)San Juan, Puerto-Rico, 18th - 21st December 2011We have fabricated and investigated several types of GaN MOSFETs with normally-off operation.
Hahm, S.-H. +18 more
core +1 more source
Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications [PDF]
In this work, we report on the beta-gallium oxide (β-Ga2O3) monolithic bidirectional switch. The as-fabricated switch works on enhancement mode operation with a threshold voltage of ∼4 V.
Kumar, Mritunjay +6 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2020 A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha +6 more
doaj +1 more source
(Invited) High Power Normally-Off GaN MOSFET [PDF]
, 2011 The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN ...
Takehiko Nomura +8 more
core +1 more source
Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs
Crystals, 2020 A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction
Ki-Sik Im +5 more
doaj +1 more source