Results 81 to 90 of about 1,694,370 (293)
, 2016 As silicon transistors have become a staple in everyday usages, other semiconductor materials (specifically III-V materials) are being researched to determine how their differing physical properties can be harnessed toward even better devices or ...
Tsai, Philip
core
GaAs integrated circuits with normally-off processes : a real market opportunity [PDF]
, 1992 GaAs normally-off FET processes have now reached a maturity level such that their application domains extend to VLSI digital circuits, analogue and mixed-signal analogue/digital circuits. They represent a real market opportunity for the GaAs industry and
Gourrier, Serge
core +1 more source
SEMINAIRE EHESS 2019 / Revisiter la Révolution iranienne de 1979 [PDF]
Chowra Makaremi (Chargée de recherche au CNRS et directrice du projet ERC “Off-Site”) et Yasmin Nadir (Chercheure post-doctorale ERC “Off-Site”) co-organisent avec Marie-Ladier Fouladi (Directrice de recherche au CNRS) le séminaire EHESS Revisiter la ...
Off-Site
core +1 more source
Normally-Off Hybrid Al2O3/GaN MOSFET on Silicon Substrate Based on Wet-Etching [PDF]
, 2014 This paper reports a normally-off high voltage hybrid Al203/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove ...
Cheng P. Wen +17 more
core +1 more source
The Design of Normally-off 1300V 4H-SiC VJFET [PDF]
Proceedings of the 2015 6th International Conference on Manufacturing Science and Engineering, 2015 Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. The Normally-off 1300V SiC VJFET device's current density is 260 A/cm 2 and current is 8 A at VG= 7 V and VD = 2 V, with related specific on-resistance 7.56 mΩ·cm 2 ...
Zhifei Zhao +7 more
openaire +1 more source
FEBS Letters, EarlyView.Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley +1 more source
IEEE Access, 2020 A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su +8 more
doaj +1 more source
FEBS Letters, EarlyView.Embryo‐like structures (stembryos) are an innovative tool, but they are hindered by experimental variability and limited developmental potential. DNA methylation is crucial for mammalian development, but its status in stembryo models is poorly characterized.
Sara Canil +4 more
wiley +1 more source
FEBS Letters, EarlyView.Ascidian Ciona larvae initially show strong clockwise tail twisting, which is largely corrected during development. However, a small residual twist remains. This study shows that organized helical myofibrils in tail muscles mechanically stabilize this residual asymmetry, preventing complete restoration of bilateral symmetry and revealing how embryos ...
Yuki S. Kogure +3 more
wiley +1 more source
Normally-on / normally-off integrated operation on GaN HEMT technology for power and microwave applications [PDF]
, 2018 Ce document présente les travaux de thèse ayant pour objet la recherche et développement d’une technologie co-intégrée HEMT GaN normale-on/normally-off compatible avec les matériaux et procédés technologiques de la technologie normally-on hyperfréquence.
Trinh Xuan, Linh
core