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Targeted modulation of IGFL2‐AS1 reveals its translational potential in cervical adenocarcinoma

Molecular Oncology, EarlyView.
Cervical adenocarcinoma patients face worse outcomes than squamous cell carcinoma counterparts despite similar treatment. The identification of IGFL2‐AS1's differential expression provides a molecular basis for distinguishing these histotypes, paving the way for personalized therapies and improved survival in vulnerable populations globally.
Ricardo Cesar Cintra, Lucca Paolo Hsu Helmich, Daniel Rodrigues de Bastos, Laura Sichero, Patrícia Savio de Araujo‐Souza, Fabio Passetti, Luisa Lina Villa   +6 more
wiley   +1 more source

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A Fast ON-State Voltage Measurement Circuit for Power Devices Characterization

IEEE Transactions on Power Electronics, 2022
The precise measurement of the on-state voltage of power devices working in real operating conditions is the key for their characterization as well as health monitoring. This letter proposes a new on-state voltage measurement circuit featuring very high bandwidth and accuracy.
Rossetto L., Spiazzi G.
openaire   +1 more source

Active Clamp Circuit for Online ON-State Voltage Measurement of High Voltage SiC MOSFETs Power Module

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023
This paper deals with online measurement of degradation sensitive electrical parameters leading to a healthmonitoring approach for power module. The on-state resistance RDSON is a key aging indicator of silicon carbideMOSFETs. It can provide information on both chip and packaging degradation allowing more reliable powerelectronic converter.
Laspeyres, Antoine, Descamps, Anne-Sophie, Batard, Christophe, Ginot, Nicolas, Le, Long, Azzopardi, Stéphane   +5 more
openaire   +2 more sources

Two-dimensional modeling of on state voltage drop in IGBT

1997 21st International Conference on Microelectronics. Proceedings, 2002
In this paper a two-dimensional analysis of the on-state voltage drop for an IGBT, investigating the influence of the geometrical parameters of the device on current handling capabilities, is presented. Numerical simulations show that an optimal ratio between the cell dimension and the width of the epilayer region under the gate electrode exists ...
NAPOLI, ETTORE, STROLLO, ANTONIO GIUSEPPE MARIA, SPIRITO, PAOLO   +2 more
openaire   +2 more sources

600 V CSTBT having ultra low on-state voltage

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002
This report premieres to reveal remarkable characteristics of the newly invented 600 V CSTBT (Carrier Stored Trench-Gate Bipolar Transistor). The essential significance of the characteristics is that the fabricated 600 V/50 A (equipped with an optimized CS-N layer) can achieve the level that on-state voltage is 1.22 V (J/sub c/=210 A/cm/sup 2/) at Tj ...
H. Takahashi, S. Aono, E. Yoshida, J. Moritani, S. Hine   +4 more
openaire   +1 more source

An ON-State Voltage Calculation Scheme of MMC Submodule IGBT

IEEE Transactions on Power Electronics, 2019
The degradation of submodule (SM) insulated gate bipolar transistors (IGBTs) in a modular multilevel converter (MMC) can be monitored through their on -state voltages. This paper proposes a scheme to calculate the IGBT on -state voltages at rated current and normal junction temperature. The equations of on -state resistances are established based on
Shiying Chen, Shengchang Ji, Liang Pan, Chenshuo Liu, Lingyu Zhu   +4 more
openaire   +1 more source

Condition Monitoring of High Voltage Press-Pack IGBT with On-State Collector-Emitter Voltage

2019
Insulated gate bipolar transistor (IGBT) is the critical component in Module multilevel converter (MMC) submodule and is aged under operating condition. As the voltage rating of MMC-HVDC power transmission continues raising, high voltage press-pack IGBT (PPI) will be used widely.
Cao Zhan, Lingyu Zhu, Chenshuo Liu, Liang Pan, Jiangyu Liu, Shengchang Ji   +5 more
openaire   +1 more source

Research on voltage-source PWM inverter based on state analysis method

2009 International Conference on Mechatronics and Automation, 2009
Output voltage waveforms according to all kinds of combination of main circuit structure, load quality and control manner for output voltage are analyzed systematically at ideal condition in voltage-source PWM inverter so that all kinds of existing quality of combination and the rule of influence to output voltage waveform for voltage-source PWM ...
Zhang Wenyi, null Wensheng Chen
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Study of Voltage-Source PWM Inverter Based on State Combination Method

2005 IEEE/PES Transmission & Distribution Conference & Exposition: Asia and Pacific, 2005
A state combination method is presented for a voltage-source PWM inverter. Main circuit states are obtained through the on-off state combination of switch devices, and valid main circuit states are determined according to the characteristic of the voltage-source PWM inverter.
null Wenyi Zhang, null Yuye Wang, null Weiming Tong, null Huiming Xu, null Lemin Yang   +4 more
openaire   +1 more source

Square wave voltages-induced ON states of organic resistive memory devices

Applied Physics Letters, 2016
In organic resistive memory device field, alternating current (AC) has seldom been studied systematically. In the present work, square wave voltage pulses are considered to obtain memory switching to the ON state with voltage amplitude lower than the threshold voltage of the device, even with less time.
Jiajun Qin, Ming Chu, Huan Peng, Jiawei Zhang, Xiaoyuan Hou   +4 more
openaire   +1 more source