Results 171 to 180 of about 7,990 (195)

A Low Loss and On-State Voltage Superjunction IGBT with Depletion Trench

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
In this paper, a novel superjunction IGBT with a depletion trench (DT SJ IGBT) is proposed and investigated by simulation. In the on-state, the depletion trench together with gate trench depletes the P-pillar between them and thus forms a hole barrier to realize an enhanced carrier store effect.
Xiaorong Luo, Sen Zhang, Jie Wei, Yang Yang, Wei Su, Diao Fan, Congcong Li, Zhaoji Li, Bo Zhang   +8 more
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A voltage clamp circuit for the real-time measurement of the on-state voltage of power transistors

2016 IEEE Energy Conversion Congress and Exposition (ECCE), 2016
For real-time monitoring of the on-resistance of a power transistor, the voltage and current should be measured during the switching operation. When the voltage waveform is measured, the amplifier inside the measuring oscilloscope may be distorted if the range of the measurement channel is not set wide enough to measure both on-state and off-state ...
Lei Ren, Qian Shen, Chunying Gong
openaire   +1 more source

DC and Pulsed measurements of on-state breakdown voltage

1999
The BVDS ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current are correlated with conventional measurements of gate current due to impact-ionization. The influence of thermal e€ects on breakdown DC measurements is demonstrated.
MENEGHESSO, GAUDENZIO, G. MASSARI, BUTTARI, DARIO, A. BORTOLETTO, M. MARETTO, ZANONI, ENRICO   +5 more
openaire   +1 more source

Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

Japanese Journal of Applied Physics, 2019
In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto   +12 more
openaire   +1 more source

Thyristor voltage drop in the on-state

1976
When a thyristor is in the forward-conducting state, all device junctions are forward biased and the device presents a minimum resistance to the forward current flow. At moderate and high injection levels, two of the three forward-biased junctions usually exhibit nearly equal but opposite potentials.
openaire   +1 more source

Temperature dependence of the on-state voltage drop in field-stop IGBTs

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018
Insulated Gate Bipolar Transistor (IGBT) is the reference design for power semiconductor switches in the range of the medium-high power applications. Different designs were proposed along the development story of this device, but the actual trend is leaded by the Field-Stop IGBT (FS-IGBT) concept.
Maresca L., Riccio M., Breglio G., Irace A., Mirone P., Sanfilippo C., Merlin L.   +6 more
openaire   +2 more sources

A Reverse Conducting IGBT with low on-state voltage and turnoff loss

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
A low on-state voltage with fast turnoff speed named CSFP (Carrier Stored Floating P-region)-RC (Reverse Conducting) IGBT is proposed in this paper. By sandwich an n layer between the p-well and n-drift as a CS (Carrier Stored) layer, the carrier concentration at the top of the drift is tremendously increased, to make the entire device doping ...
Bo Jiang, Frank X. C. Jiang, Zhigui Li, Xinnan Lin   +3 more
openaire   +1 more source

On-line estimation of IGBT junction temperature using on-state voltage drop

Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242), 1998
In this paper, a noninvasive and accurate on-line estimation method for IGBT junction temperature is proposed. To optimize the heat management of IGBTs, it provides accurate information about junction temperature. The proposed method requires a few additional passive circuit components for the estimation and it can be easily incorporated into the ...
null Yong-Seok Kim, Seung-Ki Sul
openaire   +1 more source

600 V trench-gate NPT-IGBT with excellent low on-state voltage

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2002
The 600 V Non-Punch Through (NPT) IGBT which has low on-state voltage (V/sub CE/(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V/sub CE/(sat).
M. Tanaka, S. Teramae, Y. Takahashi, T. Takeda, M. Yamaguchi, T. Ogura, T. Tsunoda, S. Nakao   +7 more
openaire   +1 more source

A low on-state voltage TIGBT with planar gate self-biased pMOS

2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS), 2017
A novel Trench Insulated Bipolar Transistor (TIGBT) is proposed, where a buried P-layer beneath the N-type carrier stored layer is introduced and connected to the cathode electrode through a planar gate self-biased pMOS. The potential of the N-type carrier stored layer could be automatically clamped by the planar gate self-biased pMOS. As a result, the
Ping Li, Haimeng Huang, Xingbi Chen
openaire   +1 more source