Results 91 to 100 of about 380 (120)

Line end optimization through optical proximity correction (OPC): a case study

SPIE Proceedings, 2006
Device performance is highly associated with the line end performance of critical layers. Poly line end shortening (LES) or bridging can result in leakage or short circuit. Model-based optical proximity correction (OPC) prioritized to fit one-dimensional pitch structures can also improve two-dimensional line end performance.
Dyiann Chou, Ken McAllister
openaire   +3 more sources

Fabrication and pattern transfer of optical proximity correction (OPC) mask

SPIE Proceedings, 1994
An application of a mask with serif patterns to a 0.8 micrometers rule mask ROM programming layer is discussed. A serif pattern is the unprinting size pattern added to the corner of original pattern. It suppresses the corner rounding caused by the lack of resolution performance of a lithography exposure system.
Emiko Sugiura, Hisashi Watanabe, Tadashi Imoriya, Yoshihiro Todokoro   +3 more
openaire   +3 more sources

Full-depth optical proximity correction (FD-OPC) based on E-D forest

SPIE Proceedings, 1999
When the k 1 number approaches 0.6 and below, optical proximity correction (OPC) is inevitable. Most existing OPC schemes correct the image in the focal planes without considering the possibility of different optimum focuses for the features to be corrected.
Burn J. Lin, Peter Young
openaire   +3 more sources

P‐79: New Applications of Optical Proximity Correction (OPC) Technology in the Display Industry

SID Symposium Digest of Technical Papers
This article introduces two new application cases of Optical Proximity Correction (OPC) technology in display backboards. The first method is to use OPC technology on the mask template layout to solve the Mura defect problem caused by diffraction induced exposure increase during the splicing process of the Over Coat (OC) layer mask template.
Jing Wang, Chunyang Wang, Jing Yang, Ran Li, Zheng Liu   +4 more
openaire   +3 more sources

Neural networks application for OPC (optical proximity correction) in mask making

Microelectronic Engineering, 1996
Abstract In this paper a neural network method for optical proximity correction is presented. A non linear two-dimensional spatial inverse filter is proposed as deconvolutional factor over pattern plane. Test sets for the different correction strategies were prepared. Boltzmann machine neural network for training set preparation is proposed.
openaire   +3 more sources

Advanced Optical Proximity Correction (OPC) Techniques in Computational Lithography: Addressing the Challenges of Pattern Fidelity and Edge Placement Error

Global Journal of Medical Case Reports, 2022
Preethish Nanan Botlagunta, Subrahmanyasarma Chitta   +1 more
openaire   +3 more sources

TIP-OPC: a new topological invariant paradigm for pixel based optical proximity correction

2007 IEEE/ACM International Conference on Computer-Aided Design, 2007
Peng Yu, David Z. Pan
openaire   +3 more sources

Optical proximity correction (OPC)

Proceedings of the 41st annual Design Automation Conference, 2004
As the technology migrates into the deep submicron manufacturing(DSM) era, the critical dimension of the circuits is getting smaller than the lithographic wavelength. The unavoidable light diffraction phenomena in the sub-wavelength technologies have become one of the major factors in the yield rate.
Li-Da Huang, Martin D. F. Wong
openaire   +1 more source

P‐3.25: Synergistic effects between Optical Proximity Correction (OPC) and lithography process simulation in display backplane

SID Symposium Digest of Technical Papers, 2022
In this paper, lithographic simulation tools, including Optical Proximity Correction (OPC), have been applied in designing backplane layout of displays. That will lead to better resolution of lower feature size of the lithography process in display manufacturing with wider process window.
Shantao Chen, Meng Zhao, Qiuhua Meng, Ming Liu, Lianjian Li, Zheng Liu, Brian Kao, Dawei Wang   +7 more
openaire   +1 more source

Using Machine Learning Methods to Predict the Magnitude and the Direction of Mask Fragments Displacement in Optical Proximity Correction (OPC)

Optical Memory and Neural Networks, 2021
Abstract: The paper studies the effectiveness of machine learning methods in computational photolithography. The first task is to determine the direction of displacement of the mask contour fragment. The second task is to determine the amount of displacement of the mask contour fragment.
Tryasoguzov P.E., Kuzovkov A.V., Karandashev I.M., Teplov G.S.   +3 more
openaire   +2 more sources