Results 101 to 110 of about 421 (134)

Optical proximity correction (OPC)

Proceedings of the 41st annual Design Automation Conference, 2004
As the technology migrates into the deep submicron manufacturing(DSM) era, the critical dimension of the circuits is getting smaller than the lithographic wavelength. The unavoidable light diffraction phenomena in the sub-wavelength technologies have become one of the major factors in the yield rate.
Li-Da Huang, Martin D. F. Wong
openaire   +1 more source

Using Machine Learning Methods to Predict the Magnitude and the Direction of Mask Fragments Displacement in Optical Proximity Correction (OPC)

Optical Memory and Neural Networks, 2021
Abstract: The paper studies the effectiveness of machine learning methods in computational photolithography. The first task is to determine the direction of displacement of the mask contour fragment. The second task is to determine the amount of displacement of the mask contour fragment.
Tryasoguzov P.E., Kuzovkov A.V., Karandashev I.M., Teplov G.S.   +3 more
openaire   +2 more sources

P‐3.25: Synergistic effects between Optical Proximity Correction (OPC) and lithography process simulation in display backplane

SID Symposium Digest of Technical Papers, 2022
In this paper, lithographic simulation tools, including Optical Proximity Correction (OPC), have been applied in designing backplane layout of displays. That will lead to better resolution of lower feature size of the lithography process in display manufacturing with wider process window.
Shantao Chen, Meng Zhao, Qiuhua Meng, Ming Liu, Lianjian Li, Zheng Liu, Brian Kao, Dawei Wang   +7 more
openaire   +1 more source

Investigation of optical proximity correction (OPC) and non-uniformities on the performance of resistivity and linewidth measurements

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307), 2003
The effect of optical proximity correction (OPC) on test structures is examined using DEPICT for the lithography simulation and MEDICI for the electrical calculations. It is concluded that OPC can be successfully used to reduce line shortening due to the voltage taps without causing necking effects on the track being measured. The effect of asymmetries
S. Smith, A.J. Walton, M. Fallon
openaire   +1 more source

Identify Optical Proximity Correction (OPC) issue in 0.13 μm technology development

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003, 2004
In this paper, we explained a failure analysis methodology to identify optical proximity correction issues in 0.13 /spl mu/m technology development. Here we used, the continue-on-failure wafer sort technology for yield analysis.
null Zhi Hong Mai, null Benjamin Lau, null Gang Qian, null Jian Jun Shi, null Ran He, null Jessica Chin   +5 more
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Defining a physically accurate laser bandwidth input for optical proximity correction (OPC) and modeling

SPIE Proceedings, 2008
In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian forms compared to using measurement-derived laser fingerprints. In this work, we show that the use of the
Ivan Lalovic, Oleg Kritsun, Sarah McGowan, Joseph Bendik, Mark Smith, Nigel Farrar   +5 more
openaire   +1 more source

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation

Nanotechnology, 2017
Abstract Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field ...
Seonghyeon Oh, Dandan Han, Hyeon Bo Shim, Jae W Hahn   +3 more
openaire   +2 more sources

Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-μm process

SPIE Proceedings, 2000
The recent development of lithographic resolution enhancement techniques of optical proximity correction (OPC) and phase shift masks (PSM) enable sprinting critical dimension (CD) features that are significantly smaller than the exposure wavelength.
Hongmei Liao, Shane R. Palmer, Kayvan Sadra   +2 more
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Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation

SPIE Proceedings, 2002
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test
Alexandra Barberet, Gilles L. Fanget, Peter D. Buck, Olivier Toublan, Jean-Charles Richoilley, Michel Tissier   +5 more
openaire   +1 more source

Understanding the impact of rigorous mask effects in the presence of empirical process models used in optical proximity correction (OPC)

SPIE Proceedings, 2007
Some practical aspects of integrating a mask modeling solution into the Optical Proximity Correction (OPC) framework are discussed. Specifically, investigations were performed to understand to what degree empirical process models used in OPC can compensate for mask effects when a Kirchhoff mask model is used.
Michael C. Lam, Konstantinos Adam
openaire   +1 more source