Results 101 to 110 of about 380 (120)
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Identify Optical Proximity Correction (OPC) issue in 0.13 μm technology development
Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003, 2004In this paper, we explained a failure analysis methodology to identify optical proximity correction issues in 0.13 /spl mu/m technology development. Here we used, the continue-on-failure wafer sort technology for yield analysis.
null Zhi Hong Mai +5 more
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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307), 2003
The effect of optical proximity correction (OPC) on test structures is examined using DEPICT for the lithography simulation and MEDICI for the electrical calculations. It is concluded that OPC can be successfully used to reduce line shortening due to the voltage taps without causing necking effects on the track being measured. The effect of asymmetries
S. Smith, A.J. Walton, M. Fallon
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The effect of optical proximity correction (OPC) on test structures is examined using DEPICT for the lithography simulation and MEDICI for the electrical calculations. It is concluded that OPC can be successfully used to reduce line shortening due to the voltage taps without causing necking effects on the track being measured. The effect of asymmetries
S. Smith, A.J. Walton, M. Fallon
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SPIE Proceedings, 2008
In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian forms compared to using measurement-derived laser fingerprints. In this work, we show that the use of the
Ivan Lalovic +5 more
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In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian forms compared to using measurement-derived laser fingerprints. In this work, we show that the use of the
Ivan Lalovic +5 more
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Nanotechnology, 2017
Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field distribution for pattern design.
Seonghyeon Oh +3 more
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Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field distribution for pattern design.
Seonghyeon Oh +3 more
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Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-μm process
SPIE Proceedings, 2000The recent development of lithographic resolution enhancement techniques of optical proximity correction (OPC) and phase shift masks (PSM) enable sprinting critical dimension (CD) features that are significantly smaller than the exposure wavelength.
Hongmei Liao +2 more
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SPIE Proceedings, 2002
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test
Alexandra Barberet +5 more
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In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test
Alexandra Barberet +5 more
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SPIE Proceedings, 2007
Some practical aspects of integrating a mask modeling solution into the Optical Proximity Correction (OPC) framework are discussed. Specifically, investigations were performed to understand to what degree empirical process models used in OPC can compensate for mask effects when a Kirchhoff mask model is used.
Michael C. Lam, Konstantinos Adam
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Some practical aspects of integrating a mask modeling solution into the Optical Proximity Correction (OPC) framework are discussed. Specifically, investigations were performed to understand to what degree empirical process models used in OPC can compensate for mask effects when a Kirchhoff mask model is used.
Michael C. Lam, Konstantinos Adam
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SPIE Proceedings, 2002
We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
Alexandra Barberet +5 more
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We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
Alexandra Barberet +5 more
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1996 Symposium on VLSI Technology. Digest of Technical Papers, 2002
A 5.01-/spl mu/m/sup 2/ full-CMOS SRAM cell using a 0.28-/spl mu/m design rule has been developed and the cell operation at as low as 0.6 V was confirmed. This cell has been designed not only to be small but also to be widened bitline pitch for reduction of bitline delay.
M. Ueshima +8 more
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A 5.01-/spl mu/m/sup 2/ full-CMOS SRAM cell using a 0.28-/spl mu/m design rule has been developed and the cell operation at as low as 0.6 V was confirmed. This cell has been designed not only to be small but also to be widened bitline pitch for reduction of bitline delay.
M. Ueshima +8 more
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Applied Optics
Optical proximity correction (OPC) is a pivotal resolution enhancement technique that compensates for the image distortion in the optical lithography process. However, the turn-around time of modern OPC techniques, namely model-based OPC (MBOPC), increases dramatically as the lithography technology node constantly pushes forward.
Jingqing Liu, Xu Ma
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Optical proximity correction (OPC) is a pivotal resolution enhancement technique that compensates for the image distortion in the optical lithography process. However, the turn-around time of modern OPC techniques, namely model-based OPC (MBOPC), increases dramatically as the lithography technology node constantly pushes forward.
Jingqing Liu, Xu Ma
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