Results 61 to 70 of about 98 (86)
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Nanotechnology, 2017
Abstract Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field ...
Seonghyeon Oh +3 more
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Abstract Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field ...
Seonghyeon Oh +3 more
openaire +2 more sources
Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-μm process
SPIE Proceedings, 2000The recent development of lithographic resolution enhancement techniques of optical proximity correction (OPC) and phase shift masks (PSM) enable sprinting critical dimension (CD) features that are significantly smaller than the exposure wavelength.
Hongmei Liao +2 more
openaire +1 more source
SPIE Proceedings, 2002
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test
Alexandra Barberet +5 more
openaire +1 more source
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test
Alexandra Barberet +5 more
openaire +1 more source
SPIE Proceedings, 2002
We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
Alexandra Barberet +5 more
openaire +1 more source
We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
Alexandra Barberet +5 more
openaire +1 more source
1996 Symposium on VLSI Technology. Digest of Technical Papers, 2002
A 5.01-/spl mu/m/sup 2/ full-CMOS SRAM cell using a 0.28-/spl mu/m design rule has been developed and the cell operation at as low as 0.6 V was confirmed. This cell has been designed not only to be small but also to be widened bitline pitch for reduction of bitline delay.
M. Ueshima +8 more
openaire +1 more source
A 5.01-/spl mu/m/sup 2/ full-CMOS SRAM cell using a 0.28-/spl mu/m design rule has been developed and the cell operation at as low as 0.6 V was confirmed. This cell has been designed not only to be small but also to be widened bitline pitch for reduction of bitline delay.
M. Ueshima +8 more
openaire +1 more source
Applied Optics
Optical proximity correction (OPC) is a pivotal resolution enhancement technique that compensates for the image distortion in the optical lithography process. However, the turn-around time of modern OPC techniques, namely model-based OPC (MBOPC), increases dramatically as the lithography technology node constantly pushes forward.
Jingqing Liu, Xu Ma
openaire +2 more sources
Optical proximity correction (OPC) is a pivotal resolution enhancement technique that compensates for the image distortion in the optical lithography process. However, the turn-around time of modern OPC techniques, namely model-based OPC (MBOPC), increases dramatically as the lithography technology node constantly pushes forward.
Jingqing Liu, Xu Ma
openaire +2 more sources
Improvement of YX42° Cut LiTaO3 SAW Filters with Optical Proximity Effect Correction Method
Micromachines, 2023Xing Han, , Yushuai Liu
exaly
Optical proximity correction (OPC) methods and methods of manufacturing masks using the OPC methods
2021YEO SANGCHUL, CHOI NARAK
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Etch proximity correction by integrated model-based retargeting and OPC flow
Proceedings of SPIE, 2007Yuri Granik +2 more
exaly