Results 51 to 60 of about 98 (86)

Neural networks application for OPC (optical proximity correction) in mask making

Microelectronic Engineering, 1996
Abstract In this paper a neural network method for optical proximity correction is presented. A non linear two-dimensional spatial inverse filter is proposed as deconvolutional factor over pattern plane. Test sets for the different correction strategies were prepared. Boltzmann machine neural network for training set preparation is proposed.
exaly   +2 more sources

Understanding the impact of rigorous mask effects in the presence of empirical process models used in optical proximity correction (OPC)

SPIE Proceedings, 2007
Some practical aspects of integrating a mask modeling solution into the Optical Proximity Correction (OPC) framework are discussed. Specifically, investigations were performed to understand to what degree empirical process models used in OPC can compensate for mask effects when a Kirchhoff mask model is used.
Konstantinos Adam
exaly   +2 more sources

TIP-OPC: a new topological invariant paradigm for pixel based optical proximity correction

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, 2007
David Z Pan
exaly   +2 more sources

Advanced Optical Proximity Correction (OPC) Techniques in Computational Lithography: Addressing the Challenges of Pattern Fidelity and Edge Placement Error

Global Journal of Medical Case Reports, 2022
Preethish Nanan Botlagunta, Subrahmanyasarma Chitta   +1 more
exaly   +2 more sources

Optical proximity correction (OPC)

Proceedings of the 41st annual Design Automation Conference, 2004
As the technology migrates into the deep submicron manufacturing(DSM) era, the critical dimension of the circuits is getting smaller than the lithographic wavelength. The unavoidable light diffraction phenomena in the sub-wavelength technologies have become one of the major factors in the yield rate.
Li-Da Huang, Martin D. F. Wong
openaire   +1 more source

Fabrication and pattern transfer of optical proximity correction (OPC) mask

SPIE Proceedings, 1994
An application of a mask with serif patterns to a 0.8 micrometers rule mask ROM programming layer is discussed. A serif pattern is the unprinting size pattern added to the corner of original pattern. It suppresses the corner rounding caused by the lack of resolution performance of a lithography exposure system.
Emiko Sugiura, Hisashi Watanabe, Tadashi Imoriya, Yoshihiro Todokoro   +3 more
openaire   +1 more source

P‐3.25: Synergistic effects between Optical Proximity Correction (OPC) and lithography process simulation in display backplane

SID Symposium Digest of Technical Papers, 2022
In this paper, lithographic simulation tools, including Optical Proximity Correction (OPC), have been applied in designing backplane layout of displays. That will lead to better resolution of lower feature size of the lithography process in display manufacturing with wider process window.
Shantao Chen, Meng Zhao, Qiuhua Meng, Ming Liu, Lianjian Li, Zheng Liu, Brian Kao, Dawei Wang   +7 more
openaire   +1 more source

Using Machine Learning Methods to Predict the Magnitude and the Direction of Mask Fragments Displacement in Optical Proximity Correction (OPC)

Optical Memory and Neural Networks, 2021
Abstract: The paper studies the effectiveness of machine learning methods in computational photolithography. The first task is to determine the direction of displacement of the mask contour fragment. The second task is to determine the amount of displacement of the mask contour fragment.
Tryasoguzov P.E., Kuzovkov A.V., Karandashev I.M., Teplov G.S.   +3 more
openaire   +2 more sources

Identify Optical Proximity Correction (OPC) issue in 0.13 μm technology development

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003, 2004
In this paper, we explained a failure analysis methodology to identify optical proximity correction issues in 0.13 /spl mu/m technology development. Here we used, the continue-on-failure wafer sort technology for yield analysis.
null Zhi Hong Mai, null Benjamin Lau, null Gang Qian, null Jian Jun Shi, null Ran He, null Jessica Chin   +5 more
openaire   +1 more source

Investigation of optical proximity correction (OPC) and non-uniformities on the performance of resistivity and linewidth measurements

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307), 2003
The effect of optical proximity correction (OPC) on test structures is examined using DEPICT for the lithography simulation and MEDICI for the electrical calculations. It is concluded that OPC can be successfully used to reduce line shortening due to the voltage taps without causing necking effects on the track being measured. The effect of asymmetries
S. Smith, A.J. Walton, M. Fallon
openaire   +1 more source