Results 241 to 250 of about 21,020,521 (317)

Real‐time monitoring of tunnel structures using digital twin and artificial intelligence: A short overview

Deep Underground Science and Engineering, EarlyView.
How artificial intelligence (AI) and digital twin (DT) technologies are revolutionizing tunnel surveillance, offering proactive maintenance strategies and enhanced safety protocols. It explores AI's analytical power and DT's virtual replicas of infrastructure, emphasizing their role in optimizing maintenance and safety in tunnel management.
Mohammad Afrazi, Danial Jahed Armaghani, Hossein Afrazi, Hadi Fattahi, Pijush Samui   +4 more
wiley   +1 more source

The impact of forced closure on proppant distribution of hydraulic fracturing in shale formations

Deep Underground Science and Engineering, EarlyView.
Research findings demonstrate that implementing forced closure within shale formations can remarkably mitigate proppant settlement, concurrently increasing the effective propped surface area from 29.74% to 38.68%. Abstract Forced closure is widely used in conventional oil and gas reservoirs to promote uniform proppant placement.
Tongxuan Gu, Hanyi Wang, Quan Gan, Shuang Zheng   +3 more
wiley   +1 more source

Powerful yet challenging: mechanistic niche models for predicting invasive species potential distribution under climate change

Ecography, EarlyView.
Risk assessments of invasive species present one of the most challenging applications of species distribution models (SDMs) due to the fundamental issues of distributional disequilibrium, niche changes, and truncation. Invasive species often occupy only a fraction of their potential environmental and geographic ranges, as their spatiotemporal dynamics ...
Erola Fenollosa, Sean E. H. Pang, Natalie J. Briscoe, Antoine Guisan, Roberto Salguero-Gómez   +4 more
wiley   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

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Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
The reverse blocking p-type GaN (p-GaN) gate high electron mobility transistors with multi-column p-GaN/Schottky alternate-island drain (MPS-HEMTs) are proposed and experimentally demonstrated. The p-GaN/AlGaN junctions (P-islands) and Schottky-contacts (
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +2 more sources

The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT

Semiconductor Science and Technology, 2022
Abstract In this paper, the influence of a lightly doped p-GaN (p−-GaN) cap layer on p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) (LDP-HEMTs) was investigated. No difference in output or off-state breakdown characteristics was observed, but there was a negative shift in threshold voltage (V TH).
Kai Liu, Runhao Wang, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Junchun Bai, Bin Cheng, Ruiyu Liu, Ang Li, Yaopeng Zhao, Yue Hao   +10 more
openaire   +2 more sources

Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform

Applied Physics Letters
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far.
Zhiwei Sun, Tianyu Zhao, Maoqing Ling, Jingang Li, Hao Tian, Weisheng Wang, Yuanlei Zhang, Jie Zhang, Yinchao Zhao, Ivona Z. Mitrovic, Harm van Zalinge, Kain Lu Low, Sen Huang, Wen Liu   +13 more
openaire   +2 more sources

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

Applied Physics Letters, 2020
This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize the current conduction and voltage blocking characteristics of the regrown sidewall p-n junction, which ...
Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, Yuhao Zhang   +8 more
openaire   +2 more sources

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

IEEE Electron Device Letters, 2023
An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer.
Yanlin Wu, Jin Wei, Maojun Wang, Muqin Nuo, Junjie Yang, Wei Lin, Zheyang Zheng, Li Zhang, M. Hua, Xuelin Yang, Y. Hao, K. J. Chen, B. Shen   +12 more
semanticscholar   +1 more source

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
In this work, the gate current characteristics are investigated to explain the threshold voltage shift in AlGaN/GaN high electron mobility transistors (HEMTs) with a p-GaN gate.
Shun-Wei Tang, B. Bakeroot, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, T. Lo, M. Borga, D. Wellekens, N. Posthuma, S. Decoutere, Tian-Li Wu   +10 more
semanticscholar   +1 more source