Results 251 to 260 of about 21,020,521 (317)

High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

IEEE Electron Device Letters, 2023
In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN /AlGaN/GaN HEMT to improve the threshold voltage and gate reliability.
Mao Jia, Bin Hou, Ling Yang, Fuchun Jia, Xuerui Niu, Jiale Du, Qingyuan Chang, Meng Zhang, Mei Wu, Xinchuang Zhang, Hao Lu, Xiao-hua Ma, Yue Hao   +12 more
semanticscholar   +1 more source

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

IEEE Transactions on Electron Devices, 2023
In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on p-GaN cap layer. Compared with conventional p-GaN gate HEMT, the threshold voltage of in situ AlN/p-GaN gate HEMT shifts from 1.8 to 3.9 V, and the forward gate
Yinhe Wu, Shuang Liu, Jincheng Zhang, Shenglei Zhao, Xiangdong Li, Kai Zhang, Yue Ai, Weihang Zhang, Tangsheng Chen, Yue Hao   +9 more
semanticscholar   +1 more source

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

IEEE Transactions on Electron Devices, 2023
In this work, we have comprehensively studied the forward/reverse G-to-S electrostatic discharge (ESD) robustness for Ohmic-gate p-GaN HEMT. It is found that Ohmic-gate p-GaN HEMT exhibits superior G-to-S ESD robustness than Schottky-gate p-GaN HEMT with
Yijun Shi, Zhiyuan He, Yun Huang, Z. Cai, Yiqiang Chen, Liye Cheng, Wanjun Chen, Ruize Sun, Chao Liu, G. Lu, Bo Zhang   +10 more
semanticscholar   +1 more source

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD.

ACS Applied Materials and Interfaces, 2022
In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/β, and
Yongjian Ma, Tiwei Chen, Xiaodong Zhang, Wenbo Tang, Bo Feng, Yu Hu, Li Zhang, Xin Zhou, Xing Wei, K. Xu, D. Mudiyanselage, H. Fu, B. Zhang   +12 more
semanticscholar   +1 more source

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

IEEE Transactions on Electron Devices, 2022
To assess GaN power transistors’ capability to maintain a decent E-mode operation, ${V}_{\text {th}}$ at high ${V}_{\text {DS}}$ is measured for Schottky-type p-GaN gate HEMT, and an excessive negative ${V}_{\text {th}}$ shift is observed.
Muqin Nuo, Jin Wei, Maojun Wang, Junjie Yang, Yanlin Wu, Y. Hao, B. Shen   +6 more
semanticscholar   +1 more source

Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG AlxGa1-xN Channel

IEEE Transactions on Electron Devices, 2022
In this article, the single event burnout (SEB) performances for 2DEG Alx $\text{Ga}_{{1}-{x}}\text{N}$ channel p-GaN gate high electron mobility transistors (HEMTs) have been investigated comprehensively to reveal the failure mechanisms and broaden ...
Shuang Liu, Jincheng Zhang, Shenglei Zhao, Lei Shu, Xiufeng Song, X. Qin, Yinhe Wu, Weihang Zhang, Tongde Li, Liang Wang, Zhihong Liu, Yuanfu Zhao, Y. Hao   +12 more
semanticscholar   +1 more source

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE Transactions on Electron Devices, 2021
In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage ( ${V}_{BR}$ ) and excellent saturation drain current.
Huaxing Jiang, Qifeng Lyu, Renqiang Zhu, P. Xiang, K. Cheng, K. Lau   +5 more
semanticscholar   +1 more source

A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

IEEE Transactions on Electron Devices, 2021
In this article, a physics-based analytical model which considers the channel charge ( ${\mathrm {Q}}_{{\mathrm {ch}}}$ ) for enhancement-mode p-GaN power high-electron-mobility transistors (HEMTs) is developed.
N. Modolo, Shun-Wei Tang, Hong-Jia Jiang, C. de Santi, M. Meneghini, Tian-Li Wu   +5 more
semanticscholar   +1 more source

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Superlattices and Microstructures, 2021
Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

IEEE Transactions on Electron Devices, 2021
Dynamic ${R}_{\mathrm{\scriptscriptstyle {ON}}}$ dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability.
M. Cioni, N. Zagni, F. Iucolano, M. Moschetti, G. Verzellesi, A. Chini   +5 more
semanticscholar   +1 more source