Results 11 to 20 of about 23,858 (260)
A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
IEEE Photonics Journal, 2021 We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a
Qianyu Hou +10 more
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Scientific Reports, 2021 The phase noise of microwaves extracted from optical frequency combs is fundamentally limited by thermal and shot noise, which is inherent in photodetection.
Minji Hyun, Chan-Gi Jeon, Jungwon Kim
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Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020 The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm.
Mykola Kukurudziak +2 more
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Modular spectrometer for quality assessment of solid-state detector technology [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013 The authors consider application of charge sensitive preamplifiers and spectrometric amplifiers for transformation and amplification of signals of solid state detectors.
Perevertaylo V. L. +5 more
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Micromachines, 2020 The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD).
Gaoming Li +4 more
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Spectral photosensitivity of diffused Ge-p–i–n photodiods
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020 Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or ...
Artem Fedorenko
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Off‐Grid Electrogenerated Chemiluminescence with Customized p‐i‐n Photodiodes
Small, 2023 AbstractElectrochemiluminescence (ECL) is the generation of light induced by an electrochemical reaction, driven by electricity. Here, an all‐optical ECL (AO–ECL) system is developped, which triggers ECL by the illumination of electrically autonomous “integrated” photoelectrochemical devices immersed in the electrolyte.
Zhao, Yiran +4 more
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Development and characterization of photodiode from p-Cu2CdSnS4/n-Bi2S3 heterojunction
Materials Research Express, 2020 Here we investigated the photo response behaviour of p -Cu _2 CdSnS _4 ( p -CCTS)/ n -Bi _2 S _3 heterojunction photodiode. The solution processed CCTS films without any high temperature sulfurization demonstrated the photo response behaviour, suggesting
M Suresh Kumar +3 more
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Silicic p–i–n-photodiode with small dark current
Технологія та конструювання в електронній апаратурі, 2011 The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored.
Yu. G. Dobrovolskiy, A. A. Ashcheulov
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a-Si:H p-i-n Photodiode as a Biosensor
, 2018 The p-i-n a-Si:H photodiode is promising device as transducer in biosensors. The native and light induced localized state density and energy distribution in the energy gap of a-Si:H have a large effect on the photoconductivity of thin films photodiode.
Gradišnik, Vera, Gumbarević, Darko
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