Results 21 to 30 of about 23,858 (260)
An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes [PDF]
Sensors, 2019 The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination of discrete components. We constructed a module comprising a monolithic sensor indicator device based on basic p–i–n (PIN) photodiodes and a transimpedance amplifier.
Yu-Chieh Chiu +5 more
openaire +3 more sources
Limits to Maximum Absorption Length in Waveguide Photodiodes
IEEE Photonics Journal, 2011 The maximum photocurrent, power dissipation, and linearity of waveguide photodiodes are limited by the length over which the input optical power is absorbed.
Shannon M. Madison +5 more
doaj +1 more source
Interactive Learning Material for Optoelectronic Devices using MATLAB-based GUI
مجلة العلوم البحتة والتطبيقية, 2020 Optoelectronic devices have been a difficult subject to grasp for many university students who undertake electronic engineering. Many students find it difficult to understand the operation principle of the optoelectronic devices, for instance, how a ...
Ibrahim A. Nasir, Ahmed B Abdurrhman
doaj +1 more source
Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication
Cogent Engineering, 2020 A flip-chip GaN p-i-n-i-n avalanche photodiode (APD) which integrates the merits of the prevailing APDs—hole-initiated multiplication process and front-illumination is proposed and studied via simulation.
Yangqian Wang +4 more
doaj +1 more source
Materials Research Express, 2023 The global demand for renewable energy as an alternative to traditional fossil fuels has motivated the scientific community to develop highly efficient nanocomposite materials that can be used for enhancement to optoelectronic technology.
Miad Ali Siddiq
doaj +1 more source
Advanced Engineering Materials, EarlyView.Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source
Low Junction Capacitance PIN and Avalanche Photodiodes in 180 nm CMOS
IEEE AccessThis paper presents a comprehensive study of low-capacitance PIN photodiodes and avalanche photodiodes (APDs) implemented in 180 nm CMOS.
Christoph Gasser +4 more
doaj +1 more source
Charge Generation and Recombination Pathways in All‐Polymer Bulk Heterojunction Solar Cells
Advanced Functional Materials, EarlyView.Multimodal spectroscopy and device analysis reveal how field‐dependent charge generation, transport limitations, and non‐geminate recombination govern performance losses in all polymer solar cells. The results identify the key processes controlling charge extraction and recombination, providing insights for the design of more efficient all‐polymer ...
Shahidul Alam +17 more
wiley +1 more source
Photodetectors for X- and γ-Ray Scintillators
East European Journal of PhysicsThe article analyzes X- and γ-ray detectors based on the ionizing and scintillation principles of operation. The effectiveness of using silicon p-i-n and p-n photodiodes in scintillation sensors for detecting visible photoluminescent radiation is ...
Mykola S. Kukurudziak +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.This work presents a ligand‐pairing strategy that reconstructs lead sulfide quantum dot surfaces for efficient short‐wave infrared optoelectronics. A low‐reactivity thiourea precursor combined with hydrobromic acid enables monodisperse and fully passivated quantum dots.
Dongeon Kim +16 more
wiley +1 more source